Origin of multiple memory states in organic ferroelectric field-effect transistors

B. Kam, X. Li, C. Cristoferi, E.C.P. Smits, A Mityashin, Sarah Schols, J. Genoe, G.H. Gelinck, P. Heremans

Research output: Contribution to journalArticleAcademicpeer-review

40 Citations (Scopus)
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Abstract

In this work, we investigate the ferroelectric polarization state in metal-ferroelectric-semiconductor-metal structures and in ferroelectric field-effect transistors (FeFET). Poly(vinylidene fluoride-trifluoroethylene) and pentacene was used as the ferroelectric and semiconductor, respectively. This material combination in a bottom gate—top contact transistor architecture exhibits three reprogrammable memory states by applying appropriate gate voltages. Scanning Kelvin probe microscopy in conjunction with standard electrical characterization techniques reveals the state of the ferroelectric polarization in the three memory states as well as the device operation of the FeFET.
Original languageEnglish
Article number033304
Pages (from-to)033304-1/5
Number of pages5
JournalApplied Physics Letters
Volume101
Issue number3
DOIs
Publication statusPublished - 2012

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