Organic thin-film transistors with anodized gate dielectric patterned by self-aligned embossing on flexible substrates

Yiheng Qin, Daniël H. Turkenburg, Ionut Barbu, Wiljan T.T. Smaal, Kris Myny, Wan Yu Lin, Gerwin H. Gelinck, Paul Heremans, Johan Liu, Erwin R. Meinders

Research output: Contribution to journalArticleAcademicpeer-review

22 Citations (Scopus)

Abstract

An upscalable, self-aligned patterning technique for manufacturing high- performance, flexible organic thin-film transistors is presented. The structures are self-aligned using a single-step, multi-level hot embossing process. In combination with defect-free anodized aluminum oxide as a gate dielectric, transistors on foil with channel lengths down to 5 μm are realized with high reproducibility. Resulting on-off ratios of 4 × 10 6 and mobilities as high as 0.5 cm 2 V -1 s -1 are achieved, indicating a stable process with potential to large-area production with even much smaller structures.

Original languageEnglish
Pages (from-to)1209-1214
Number of pages6
JournalAdvanced Functional Materials
Volume22
Issue number6
DOIs
Publication statusPublished - 21 Mar 2012

Keywords

  • aluminum anodization
  • organic electronics
  • self-alignment
  • thin-film transistors

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