Ordered quantum dot arrays on self-organized strain engineered templates

R. Nötzel, T. Mano, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

In this paper, we have created highly uniform one-dimensional single (In,Ga)As QD arrays on planar GaAs (100) substrates by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs quantum wire (QWR) superlattice (SL) template. During molecular beam epitaxy (MBE) of a strained (In,Ga)As/GaAs SL, elongated (In,Ga)As QDs develop into uniform QWR arrays with well-defined lateral periodicity. QWR formation relies on the anisotropic adatom surface migration and in desorption during annealing of the layers of elongated QDs after capping with a thin GaAs layer. The formation of highly uniform (In,Ga)As QD arrays with excellent PL properties is attributed to the smoothness of the strain field modulation on the dot-diameter and dot-to-dot distance length scales.
Original languageEnglish
Title of host publicationProceedings of the 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 200the 
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages694-695
Number of pages2
ISBN (Print)0-7803-7888-1
DOIs
Publication statusPublished - 2003
Event16th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2003) - Tucson, United States
Duration: 26 Oct 200330 Oct 2003
Conference number: 16

Conference

Conference16th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2003)
Abbreviated titleLEOS 2003
Country/TerritoryUnited States
CityTucson
Period26/10/0330/10/03
OtherIEEE/LEOS Annual Meeting 03

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