Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide : effect of aluminum doping

R. Groenen, E.R. Kieft, J.L. Linden, M.C.M. Sanden, van de

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)

Abstract

Aluminum-doped zinc oxide films exhibiting a rough surface morphol. are deposited on glass substrates utilizing expanding thermal plasma. Spectroscopic ellipsometry is used to evaluate optical and electronic film properties. The presence of aluminum donors in doped films is confirmed by a shift in the zinc oxide bandgap energy from 3.32 to 3.65 eV. In combination with transmission reflection measurements in the visible and NIR ranges, charge carrier densities, optical mobilities, and film resistivities have been obtained from the free carrier absorption. Film resistivities are consistent with direct measurements, values as low as 6.0 * 10-4 W cm have been obtained. The interdependence of elec. cond., film compn., and film morphol. is addressed. [on SciFinder (R)]
Original languageEnglish
Pages (from-to)711-716
JournalJournal of Electronic Materials
Volume35
Issue number4
DOIs
Publication statusPublished - 2006

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