Optimizing the parameter space for increased crystallinity of silicon nanoparticles grown in the gas phase

A. Mohan, R.E.I. Schropp, I. Poulios, W.J. Goedheer, J.K. Rath

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)

Abstract

Various plasma process parameters such as coupled power, process pressure (p), gas flow, and source gas ratios (SiH4:H2) play crucial roles in determining the size and crystallinity of the synthesized Si nanoparticles (NPs). One of the less studied parameters for NP growth is the inter-electrode distance, d. Our study focuses on the effect of d and demonstrates how a reactor with larger d (refers to d=30mm) is a simple method to enhance the crystalline ratio of NPs produced in them compared with a standard d (refers to d=10mm). Increasing d or p is not strictly equivalent, and we show that for our reactor p>0.8mbar is most effective at d=30mm to obtain purely crystalline NPs. We also establish how the larger d opens up a wider parameter space for the synthesis of crystalline Si NPs. Completely crystalline silicon NPs synthesized in this study at p=0.8mbar and larger d of 30mm.

Original languageEnglish
Pages (from-to)1826-1830
Number of pages5
JournalPhysica Status Solidi A : Applications and material science
Volume213
Issue number7
DOIs
Publication statusPublished - Jul 2016

Keywords

  • Inter-electrode distance
  • PECVD (plasma enhanced chemical vapor deposition)
  • Raman spectroscopy
  • Silicon nanocrystals

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