TY - JOUR
T1 - Optimizing the parameter space for increased crystallinity of silicon nanoparticles grown in the gas phase
AU - Mohan, A.
AU - Schropp, R.E.I.
AU - Poulios, I.
AU - Goedheer, W.J.
AU - Rath, J.K.
PY - 2016/7
Y1 - 2016/7
N2 - Various plasma process parameters such as coupled power, process pressure (p), gas flow, and source gas ratios (SiH4:H2) play crucial roles in determining the size and crystallinity of the synthesized Si nanoparticles (NPs). One of the less studied parameters for NP growth is the inter-electrode distance, d. Our study focuses on the effect of d and demonstrates how a reactor with larger d (refers to d=30mm) is a simple method to enhance the crystalline ratio of NPs produced in them compared with a standard d (refers to d=10mm). Increasing d or p is not strictly equivalent, and we show that for our reactor p>0.8mbar is most effective at d=30mm to obtain purely crystalline NPs. We also establish how the larger d opens up a wider parameter space for the synthesis of crystalline Si NPs. Completely crystalline silicon NPs synthesized in this study at p=0.8mbar and larger d of 30mm.
AB - Various plasma process parameters such as coupled power, process pressure (p), gas flow, and source gas ratios (SiH4:H2) play crucial roles in determining the size and crystallinity of the synthesized Si nanoparticles (NPs). One of the less studied parameters for NP growth is the inter-electrode distance, d. Our study focuses on the effect of d and demonstrates how a reactor with larger d (refers to d=30mm) is a simple method to enhance the crystalline ratio of NPs produced in them compared with a standard d (refers to d=10mm). Increasing d or p is not strictly equivalent, and we show that for our reactor p>0.8mbar is most effective at d=30mm to obtain purely crystalline NPs. We also establish how the larger d opens up a wider parameter space for the synthesis of crystalline Si NPs. Completely crystalline silicon NPs synthesized in this study at p=0.8mbar and larger d of 30mm.
KW - Inter-electrode distance
KW - PECVD (plasma enhanced chemical vapor deposition)
KW - Raman spectroscopy
KW - Silicon nanocrystals
UR - http://www.scopus.com/inward/record.url?scp=84963553376&partnerID=8YFLogxK
U2 - 10.1002/pssa.201532938
DO - 10.1002/pssa.201532938
M3 - Article
AN - SCOPUS:84963553376
VL - 213
SP - 1826
EP - 1830
JO - Physica Status Solidi A : Applications and material science
JF - Physica Status Solidi A : Applications and material science
SN - 1862-6300
IS - 7
ER -