Various plasma process parameters such as coupled power, process pressure (p), gas flow, and source gas ratios (SiH4:H2) play crucial roles in determining the size and crystallinity of the synthesized Si nanoparticles (NPs). One of the less studied parameters for NP growth is the inter-electrode distance, d. Our study focuses on the effect of d and demonstrates how a reactor with larger d (refers to d=30mm) is a simple method to enhance the crystalline ratio of NPs produced in them compared with a standard d (refers to d=10mm). Increasing d or p is not strictly equivalent, and we show that for our reactor p>0.8mbar is most effective at d=30mm to obtain purely crystalline NPs. We also establish how the larger d opens up a wider parameter space for the synthesis of crystalline Si NPs. Completely crystalline silicon NPs synthesized in this study at p=0.8mbar and larger d of 30mm.
|Number of pages||5|
|Journal||Physica Status Solidi A : Applications and material science|
|Publication status||Published - Jul 2016|
- Inter-electrode distance
- PECVD (plasma enhanced chemical vapor deposition)
- Raman spectroscopy
- Silicon nanocrystals