TY - JOUR
T1 - Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures
AU - Jacobs, B.
AU - Krämer, M.C.J.C.M.
AU - Geluk, E.J.
AU - Karouta, F.
PY - 2002
Y1 - 2002
N2 - We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 ohm mm (7.3 x 10^-7 ohm cm^2), a good reproducibility and an excellent line definition, making this contact very suitable for use in AlGaN/GaN FETs with short gate-source distances. This contact resistance on FET material is among the best values reported. The approach presented here can be applied to other metal schemes like Ti/Al/Pt/Au or Ti/Al/Ti/Au.
AB - We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 ohm mm (7.3 x 10^-7 ohm cm^2), a good reproducibility and an excellent line definition, making this contact very suitable for use in AlGaN/GaN FETs with short gate-source distances. This contact resistance on FET material is among the best values reported. The approach presented here can be applied to other metal schemes like Ti/Al/Pt/Au or Ti/Al/Ti/Au.
U2 - 10.1016/S0022-0248(02)00920-X
DO - 10.1016/S0022-0248(02)00920-X
M3 - Article
VL - 241
SP - 15
EP - 18
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1/2
ER -