Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

B. Jacobs; M.C.J.C.M. Krämer; E.J. Geluk; F. Karouta

doi:10.1016/S0022-0248(02)00920-X

Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

B. Jacobs, M.C.J.C.M. Krämer, E.J. Geluk, F. Karouta

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Abstract

We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 ohm mm (7.3 x 10^-7 ohm cm^2), a good reproducibility and an excellent line definition, making this contact very suitable for use in AlGaN/GaN FETs with short gate-source distances. This contact resistance on FET material is among the best values reported. The approach presented here can be applied to other metal schemes like Ti/Al/Pt/Au or Ti/Al/Ti/Au.

Original language	English
Pages (from-to)	15-18
Number of pages	4
Journal	Journal of Crystal Growth
Volume	241
Issue number	1/2
DOIs	https://doi.org/10.1016/S0022-0248(02)00920-X
Publication status	Published - 2002

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title = "Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures",

abstract = "We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 ohm mm (7.3 x 10\textasciicircum{}-7 ohm cm\textasciicircum{}2), a good reproducibility and an excellent line definition, making this contact very suitable for use in AlGaN/GaN FETs with short gate-source distances. This contact resistance on FET material is among the best values reported. The approach presented here can be applied to other metal schemes like Ti/Al/Pt/Au or Ti/Al/Ti/Au.",

author = "B. Jacobs and M.C.J.C.M. Kr{\"a}mer and E.J. Geluk and F. Karouta",

year = "2002",

doi = "10.1016/S0022-0248(02)00920-X",

language = "English",

volume = "241",

pages = "15--18",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

AU - Jacobs, B.

AU - Krämer, M.C.J.C.M.

AU - Geluk, E.J.

AU - Karouta, F.

PY - 2002

Y1 - 2002

N2 - We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 ohm mm (7.3 x 10^-7 ohm cm^2), a good reproducibility and an excellent line definition, making this contact very suitable for use in AlGaN/GaN FETs with short gate-source distances. This contact resistance on FET material is among the best values reported. The approach presented here can be applied to other metal schemes like Ti/Al/Pt/Au or Ti/Al/Ti/Au.

AB - We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 ohm mm (7.3 x 10^-7 ohm cm^2), a good reproducibility and an excellent line definition, making this contact very suitable for use in AlGaN/GaN FETs with short gate-source distances. This contact resistance on FET material is among the best values reported. The approach presented here can be applied to other metal schemes like Ti/Al/Pt/Au or Ti/Al/Ti/Au.

U2 - 10.1016/S0022-0248(02)00920-X

DO - 10.1016/S0022-0248(02)00920-X

M3 - Article

SN - 0022-0248

VL - 241

SP - 15

EP - 18

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1/2

ER -

Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

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