Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

B. Jacobs, M.C.J.C.M. Krämer, E.J. Geluk, F. Karouta

Research output: Contribution to journalArticleAcademicpeer-review

84 Citations (Scopus)
7 Downloads (Pure)

Abstract

We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 ohm mm (7.3 x 10^-7 ohm cm^2), a good reproducibility and an excellent line definition, making this contact very suitable for use in AlGaN/GaN FETs with short gate-source distances. This contact resistance on FET material is among the best values reported. The approach presented here can be applied to other metal schemes like Ti/Al/Pt/Au or Ti/Al/Ti/Au.
Original languageEnglish
Pages (from-to)15-18
Number of pages4
JournalJournal of Crystal Growth
Volume241
Issue number1/2
DOIs
Publication statusPublished - 2002

Fingerprint Dive into the research topics of 'Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures'. Together they form a unique fingerprint.

  • Cite this