Optimisation of photoresist removal from silicon wafers using atmospheric-pressure plasma jet effluent

A.T. West; M. Schans, van der; C. Xu; T. Gans; M. Cooke; E. Wagenaars

Optimisation of photoresist removal from silicon wafers using atmospheric-pressure plasma jet effluent

A.T. West, M. Schans, van der, C. Xu, T. Gans, M. Cooke, E. Wagenaars

Elementary Processes in Gas Discharges

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

Atmospheric-pressure plasma jets (APPJs) can offer high-quality etch of photoresist at rates up to 10 µm/min, compared to 10 - 100 nm/min using traditional low-pressure methods, while avoiding the inconveniences of operating vacuum systems. We determined that the removal rate of photoresist is strongly linked with the flux of atomic oxygen in the APPJ effluent as measured using laser-based diagnostics (TALIF).

Original language	English
Title of host publication	Proceedings of the 22nd International Symposium on Plasma Chemistry, 5-10 July 2015, Antwerp, Belgium
Pages	1-4
Number of pages	4
Publication status	Published - 2015
Event	22nd International Symposium on Plasma Chemistry (ISPC 22), July 5-10, 2015, Antwerp, Belgium - Antwerp, Belgium Duration: 5 Jul 2015 → 10 Jul 2015 https://www.uantwerpen.be/en/conferences/ispc22/

Conference

Conference	22nd International Symposium on Plasma Chemistry (ISPC 22), July 5-10, 2015, Antwerp, Belgium
Abbreviated title	ISPC 22
Country/Territory	Belgium
City	Antwerp
Period	5/07/15 → 10/07/15
Internet address	https://www.uantwerpen.be/en/conferences/ispc22/

Cite this

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title = "Optimisation of photoresist removal from silicon wafers using atmospheric-pressure plasma jet effluent",

abstract = "Atmospheric-pressure plasma jets (APPJs) can offer high-quality etch of photoresist at rates up to 10 µm/min, compared to 10 - 100 nm/min using traditional low-pressure methods, while avoiding the inconveniences of operating vacuum systems. We determined that the removal rate of photoresist is strongly linked with the flux of atomic oxygen in the APPJ effluent as measured using laser-based diagnostics (TALIF).",

author = "A.T. West and {Schans, van der}, M. and C. Xu and T. Gans and M. Cooke and E. Wagenaars",

year = "2015",

language = "English",

pages = "1--4",

booktitle = "Proceedings of the 22nd International Symposium on Plasma Chemistry, 5-10 July 2015, Antwerp, Belgium",

note = "22nd International Symposium on Plasma Chemistry (ISPC 22), July 5-10, 2015, Antwerp, Belgium, ISPC 22 ; Conference date: 05-07-2015 Through 10-07-2015",

url = "https://www.uantwerpen.be/en/conferences/ispc22/",

}

West, AT, Schans, van der, M, Xu, C, Gans, T, Cooke, M & Wagenaars, E 2015, Optimisation of photoresist removal from silicon wafers using atmospheric-pressure plasma jet effluent. in Proceedings of the 22nd International Symposium on Plasma Chemistry, 5-10 July 2015, Antwerp, Belgium., O-8-3, pp. 1-4, 22nd International Symposium on Plasma Chemistry (ISPC 22), July 5-10, 2015, Antwerp, Belgium, Antwerp, Belgium, 5/07/15.

Optimisation of photoresist removal from silicon wafers using atmospheric-pressure plasma jet effluent. / West, A.T.; Schans, van der, M.; Xu, C. et al.

Proceedings of the 22nd International Symposium on Plasma Chemistry, 5-10 July 2015, Antwerp, Belgium. 2015. p. 1-4 O-8-3.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Optimisation of photoresist removal from silicon wafers using atmospheric-pressure plasma jet effluent

AU - West, A.T.

AU - Schans, van der, M.

AU - Xu, C.

AU - Gans, T.

AU - Cooke, M.

AU - Wagenaars, E.

PY - 2015

Y1 - 2015

N2 - Atmospheric-pressure plasma jets (APPJs) can offer high-quality etch of photoresist at rates up to 10 µm/min, compared to 10 - 100 nm/min using traditional low-pressure methods, while avoiding the inconveniences of operating vacuum systems. We determined that the removal rate of photoresist is strongly linked with the flux of atomic oxygen in the APPJ effluent as measured using laser-based diagnostics (TALIF).

AB - Atmospheric-pressure plasma jets (APPJs) can offer high-quality etch of photoresist at rates up to 10 µm/min, compared to 10 - 100 nm/min using traditional low-pressure methods, while avoiding the inconveniences of operating vacuum systems. We determined that the removal rate of photoresist is strongly linked with the flux of atomic oxygen in the APPJ effluent as measured using laser-based diagnostics (TALIF).

M3 - Conference contribution

SP - 1

EP - 4

BT - Proceedings of the 22nd International Symposium on Plasma Chemistry, 5-10 July 2015, Antwerp, Belgium

T2 - 22nd International Symposium on Plasma Chemistry (ISPC 22), July 5-10, 2015, Antwerp, Belgium

Y2 - 5 July 2015 through 10 July 2015

ER -

Optimisation of photoresist removal from silicon wafers using atmospheric-pressure plasma jet effluent

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