Optical observation of single-carrier charging in type-II quantum ring ensembles

R.J. Young; E.P. Smakman; A.M. Sanchez; P. Hodgson; P.M. Koenraad; M. Hayne

doi:10.1063/1.3688037

Optical observation of single-carrier charging in type-II quantum ring ensembles

R.J. Young, E.P. Smakman, A.M. Sanchez, P. Hodgson, P.M. Koenraad, M. Hayne

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Abstract

A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-confinement in the GaSb ring and electron confinement in its GaAs core. The latter is responsible for a reduced inhomogeous linewidth measured in photoluminescence, in comparison to the previous measurements made on nanostructures with differing morphology in this material system. This allows the resolution of multiple peaks in the photoluminescence due to discrete charging with holes, revealing the mechanism responsible for the excitation-power-induced blueshift.

Original language	English
Article number	082104
Pages (from-to)	1-4
Number of pages	4
Journal	Applied Physics Letters
Volume	100
Issue number	8
DOIs	https://doi.org/10.1063/1.3688037
Publication status	Published - 2012

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abstract = "A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-confinement in the GaSb ring and electron confinement in its GaAs core. The latter is responsible for a reduced inhomogeous linewidth measured in photoluminescence, in comparison to the previous measurements made on nanostructures with differing morphology in this material system. This allows the resolution of multiple peaks in the photoluminescence due to discrete charging with holes, revealing the mechanism responsible for the excitation-power-induced blueshift.",

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AU - Hodgson, P.

AU - Koenraad, P.M.

AU - Hayne, M.

PY - 2012

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AB - A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-confinement in the GaSb ring and electron confinement in its GaAs core. The latter is responsible for a reduced inhomogeous linewidth measured in photoluminescence, in comparison to the previous measurements made on nanostructures with differing morphology in this material system. This allows the resolution of multiple peaks in the photoluminescence due to discrete charging with holes, revealing the mechanism responsible for the excitation-power-induced blueshift.

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DO - 10.1063/1.3688037

M3 - Article

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SP - 1

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Optical observation of single-carrier charging in type-II quantum ring ensembles

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