Optical investigation of the two-dimensional hole energy spectrum in GaAs/AlxGa1-xAs heterojunctions

A. Yu Silov, V. M. Asnin, N. S. Averkiev, J. E.M. Haverkort, L. M. Weegels, G. Weimann, J. H. Wolter

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Abstract

We present the results of optical studies on the energy spectrum of a two-dimensional hole gas (2DHG) in a GaAs/AlxGa1-xAs structure. The photoluminescence (PL) line shape in the 2DHG is investigated as a function of temperature by heating the holes by a current flow through the 2D hole channel. The line shape of the PL from the 2DHG as a function of temperature is calculated by taking into account the real band structure and the hole-hole final-state interaction. By comparing experiment and theory, it is found that the special features of the band structure predicted theoretically explain the experimental data.

Original languageEnglish
Pages (from-to)7775-7779
Number of pages5
JournalJournal of Applied Physics
Volume73
Issue number11
DOIs
Publication statusPublished - 1 Dec 1993

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