Optical investigation of the two-dimensional hole energy spectrum in GaAs/AlxGa1-xAs heterojunctions

A. Yu Silov; V. M. Asnin; N. S. Averkiev; J. E.M. Haverkort; L. M. Weegels; G. Weimann; J. H. Wolter

doi:10.1063/1.353982

Optical investigation of the two-dimensional hole energy spectrum in GaAs/Al_xGa_1-xAs heterojunctions

A. Yu Silov, V. M. Asnin, N. S. Averkiev, J. E.M. Haverkort, L. M. Weegels, G. Weimann, J. H. Wolter

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

We present the results of optical studies on the energy spectrum of a two-dimensional hole gas (2DHG) in a GaAs/Al_xGa_1-xAs structure. The photoluminescence (PL) line shape in the 2DHG is investigated as a function of temperature by heating the holes by a current flow through the 2D hole channel. The line shape of the PL from the 2DHG as a function of temperature is calculated by taking into account the real band structure and the hole-hole final-state interaction. By comparing experiment and theory, it is found that the special features of the band structure predicted theoretically explain the experimental data.

Original language	English
Pages (from-to)	7775-7779
Number of pages	5
Journal	Journal of Applied Physics
Volume	73
Issue number	11
DOIs	https://doi.org/10.1063/1.353982
Publication status	Published - 1 Dec 1993

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title = "Optical investigation of the two-dimensional hole energy spectrum in GaAs/AlxGa1-xAs heterojunctions",

abstract = "We present the results of optical studies on the energy spectrum of a two-dimensional hole gas (2DHG) in a GaAs/AlxGa1-xAs structure. The photoluminescence (PL) line shape in the 2DHG is investigated as a function of temperature by heating the holes by a current flow through the 2D hole channel. The line shape of the PL from the 2DHG as a function of temperature is calculated by taking into account the real band structure and the hole-hole final-state interaction. By comparing experiment and theory, it is found that the special features of the band structure predicted theoretically explain the experimental data.",

author = "Silov, {A. Yu} and Asnin, {V. M.} and Averkiev, {N. S.} and Haverkort, {J. E.M.} and Weegels, {L. M.} and G. Weimann and Wolter, {J. H.}",

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T1 - Optical investigation of the two-dimensional hole energy spectrum in GaAs/AlxGa1-xAs heterojunctions

AU - Silov, A. Yu

AU - Asnin, V. M.

AU - Averkiev, N. S.

AU - Haverkort, J. E.M.

AU - Weegels, L. M.

AU - Weimann, G.

AU - Wolter, J. H.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - We present the results of optical studies on the energy spectrum of a two-dimensional hole gas (2DHG) in a GaAs/AlxGa1-xAs structure. The photoluminescence (PL) line shape in the 2DHG is investigated as a function of temperature by heating the holes by a current flow through the 2D hole channel. The line shape of the PL from the 2DHG as a function of temperature is calculated by taking into account the real band structure and the hole-hole final-state interaction. By comparing experiment and theory, it is found that the special features of the band structure predicted theoretically explain the experimental data.

AB - We present the results of optical studies on the energy spectrum of a two-dimensional hole gas (2DHG) in a GaAs/AlxGa1-xAs structure. The photoluminescence (PL) line shape in the 2DHG is investigated as a function of temperature by heating the holes by a current flow through the 2D hole channel. The line shape of the PL from the 2DHG as a function of temperature is calculated by taking into account the real band structure and the hole-hole final-state interaction. By comparing experiment and theory, it is found that the special features of the band structure predicted theoretically explain the experimental data.

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JO - Journal of Applied Physics

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Optical investigation of the two-dimensional hole energy spectrum in GaAs/Al_xGa_1-xAs heterojunctions

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