Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes

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Abstract

In this note it is demonstrated that optical emission spectroscopy (OES) is an easy-to-implement and valuable tool to study, optimize, and monitor thin film growth by plasma-assisted atomic layer deposition (ALD). The species in the plasma can be identified through the analysis of the light emitted by the plasma. OES provides therefore information on the reactant species delivered to the surface by the plasma but it also yields unique insight into the surface reaction products and, as a consequence, on the reaction mechanisms of the deposition process. Time-resolved measurements reveal information about the amount of precursor dosing and length of plasma exposure needed to saturate the self-limiting half reactions, which is useful for the optimization of the ALD process. Furthermore, time-resolved OES can also be used as an easy-to-implement process monitoring tool for plasma-assisted ALD processes on production equipment; for example, to monitor reactor wall conditions or to detect process faults in real time.
Original languageEnglish
Pages (from-to)77-87
Number of pages11
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
Volume28
Issue number1
DOIs
Publication statusPublished - 2010

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Optical emission spectroscopy
Atomic layer deposition
optical emission spectroscopy
atomic layer epitaxy
Plasmas
Monitoring
Process monitoring
Surface reactions
Film growth
Time measurement
Reaction products
reaction products
surface reactions
monitors
reactors
time measurement
Thin films
optimization
thin films

Cite this

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title = "Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes",
abstract = "In this note it is demonstrated that optical emission spectroscopy (OES) is an easy-to-implement and valuable tool to study, optimize, and monitor thin film growth by plasma-assisted atomic layer deposition (ALD). The species in the plasma can be identified through the analysis of the light emitted by the plasma. OES provides therefore information on the reactant species delivered to the surface by the plasma but it also yields unique insight into the surface reaction products and, as a consequence, on the reaction mechanisms of the deposition process. Time-resolved measurements reveal information about the amount of precursor dosing and length of plasma exposure needed to saturate the self-limiting half reactions, which is useful for the optimization of the ALD process. Furthermore, time-resolved OES can also be used as an easy-to-implement process monitoring tool for plasma-assisted ALD processes on production equipment; for example, to monitor reactor wall conditions or to detect process faults in real time.",
author = "A.J.M. Mackus and S.B.S. Heil and E. Langereis and H.C.M. Knoops and {Sanden, van de}, M.C.M. and W.M.M. Kessels",
year = "2010",
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language = "English",
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pages = "77--87",
journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films",
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TY - JOUR

T1 - Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes

AU - Mackus, A.J.M.

AU - Heil, S.B.S.

AU - Langereis, E.

AU - Knoops, H.C.M.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2010

Y1 - 2010

N2 - In this note it is demonstrated that optical emission spectroscopy (OES) is an easy-to-implement and valuable tool to study, optimize, and monitor thin film growth by plasma-assisted atomic layer deposition (ALD). The species in the plasma can be identified through the analysis of the light emitted by the plasma. OES provides therefore information on the reactant species delivered to the surface by the plasma but it also yields unique insight into the surface reaction products and, as a consequence, on the reaction mechanisms of the deposition process. Time-resolved measurements reveal information about the amount of precursor dosing and length of plasma exposure needed to saturate the self-limiting half reactions, which is useful for the optimization of the ALD process. Furthermore, time-resolved OES can also be used as an easy-to-implement process monitoring tool for plasma-assisted ALD processes on production equipment; for example, to monitor reactor wall conditions or to detect process faults in real time.

AB - In this note it is demonstrated that optical emission spectroscopy (OES) is an easy-to-implement and valuable tool to study, optimize, and monitor thin film growth by plasma-assisted atomic layer deposition (ALD). The species in the plasma can be identified through the analysis of the light emitted by the plasma. OES provides therefore information on the reactant species delivered to the surface by the plasma but it also yields unique insight into the surface reaction products and, as a consequence, on the reaction mechanisms of the deposition process. Time-resolved measurements reveal information about the amount of precursor dosing and length of plasma exposure needed to saturate the self-limiting half reactions, which is useful for the optimization of the ALD process. Furthermore, time-resolved OES can also be used as an easy-to-implement process monitoring tool for plasma-assisted ALD processes on production equipment; for example, to monitor reactor wall conditions or to detect process faults in real time.

U2 - 10.1116/1.3256227

DO - 10.1116/1.3256227

M3 - Article

VL - 28

SP - 77

EP - 87

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films

SN - 0734-2101

IS - 1

ER -