Optical characteristics of single InAs/InGaAsP/InP(100) quantum dots emitting at 1.55 µm

N.I. Cade, H. Gotoh, H. Kamada, H. Nakano, S. Anantathanasarn, R. Nötzel

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Abstract

The authors have studied the emission properties of individual InAs quantum dots ??QDs?? grown inan InGaAsP matrix on InP??100?? by metal-organic vapor-phase epitaxy. Low-temperaturemicrophotoluminescence spectroscopy shows emission from single QDs around 1550 nm with acharacteristic exciton-biexciton behavior and a biexciton antibinding energy of more than 2 meVrelative to the exciton. Temperature-dependent measurements reveal negligible optical phononinduced broadening of the exciton line below 50 K, and emission from the exciton state clearlypersists above 70 K. These results are encouraging for the development of a controllable photonsource for fiber-based quantum information and cryptography systems
Original languageEnglish
Article number181113
Pages (from-to)181113-1/3
JournalApplied Physics Letters
Volume89
Issue number18
DOIs
Publication statusPublished - 2006

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    Cade, N. I., Gotoh, H., Kamada, H., Nakano, H., Anantathanasarn, S., & Nötzel, R. (2006). Optical characteristics of single InAs/InGaAsP/InP(100) quantum dots emitting at 1.55 µm. Applied Physics Letters, 89(18), 181113-1/3. [181113]. https://doi.org/10.1063/1.2378403