Optical anisotropy of semiconductor nanowires

S.L. Diedenhofen, O.L. Muskens, E.P.A.M. Bakkers, J. Gómez Rivas

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

A novel class of optically anisotropic materials is presented. Layers of semiconductor nanowires fabricated in a bottom-up process exhibit a large in-plane birefringence and show quarter-wavelength retardation for a wavelength of 690 nm. These nanowire metamaterials are promising materials for optical gas- and biosensing.
Original languageEnglish
Title of host publicationProceedings of the 2nd IEEE LEOS Winter Topicals, 12-14 Jan. 2009, Innsbruck, Austria
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages100-101
ISBN (Print)978-1-4244-2611-9
DOIs
Publication statusPublished - 2009
Event2nd IEEE/LEOS Winter Topicals (WTM 2009), January 12-14, 2009, Innsbruck, Austria - Innsbruck, Austria
Duration: 12 Jan 200914 Jan 2009

Conference

Conference2nd IEEE/LEOS Winter Topicals (WTM 2009), January 12-14, 2009, Innsbruck, Austria
Abbreviated titleWTM 2009
CountryAustria
CityInnsbruck
Period12/01/0914/01/09

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