Optical and dielectrical characterization of atomic layer deposited Nb2O5 thin films

T. Blanquart; K. Kukli; J. Niinistö; V. Longo; M. Heikkilä; M. Ritala; M. Leskelä

doi:10.1149/2.002201ssl

Optical and dielectrical characterization of atomic layer deposited Nb2O5 thin films

T. Blanquart, K. Kukli, J. Niinistö, V. Longo, M. Heikkilä, M. Ritala, M. Leskelä

Plasma & Materials Processing

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Abstract

Nb2O5 films were grown by atomic layer deposition using (tert-butylimido)tris(diethylamido)niobium as the niobium source and ozone as the oxygen source. The effects of deposition and post-deposition annealing conditions, physical thickness as well as the phase composition on the dielectric properties of Nb2O5 thin films have been investigated. In addition, the optical properties of the films have been evaluated. It was found that by tuning the deposition parameters and post deposition treatments it was possible to obtain high k-values up to 120 with reasonably low leakage current.

Original language	English
Pages (from-to)	N1-N3
Journal	Electrochemical and Solid-State Letters
Volume	1
Issue number	1
DOIs	https://doi.org/10.1149/2.002201ssl
Publication status	Published - 2012

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abstract = "Nb2O5 films were grown by atomic layer deposition using (tert-butylimido)tris(diethylamido)niobium as the niobium source and ozone as the oxygen source. The effects of deposition and post-deposition annealing conditions, physical thickness as well as the phase composition on the dielectric properties of Nb2O5 thin films have been investigated. In addition, the optical properties of the films have been evaluated. It was found that by tuning the deposition parameters and post deposition treatments it was possible to obtain high k-values up to 120 with reasonably low leakage current.",

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AU - Blanquart, T.

AU - Kukli, K.

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AU - Longo, V.

AU - Heikkilä, M.

AU - Ritala, M.

AU - Leskelä, M.

PY - 2012

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AB - Nb2O5 films were grown by atomic layer deposition using (tert-butylimido)tris(diethylamido)niobium as the niobium source and ozone as the oxygen source. The effects of deposition and post-deposition annealing conditions, physical thickness as well as the phase composition on the dielectric properties of Nb2O5 thin films have been investigated. In addition, the optical properties of the films have been evaluated. It was found that by tuning the deposition parameters and post deposition treatments it was possible to obtain high k-values up to 120 with reasonably low leakage current.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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ER -

Optical and dielectrical characterization of atomic layer deposited Nb2O5 thin films

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