Optical and dielectrical characterization of atomic layer deposited Nb2O5 thin films

T. Blanquart, K. Kukli, J. Niinistö, V. Longo, M. Heikkilä, M. Ritala, M. Leskelä

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Abstract

Nb2O5 films were grown by atomic layer deposition using (tert-butylimido)tris(diethylamido)niobium as the niobium source and ozone as the oxygen source. The effects of deposition and post-deposition annealing conditions, physical thickness as well as the phase composition on the dielectric properties of Nb2O5 thin films have been investigated. In addition, the optical properties of the films have been evaluated. It was found that by tuning the deposition parameters and post deposition treatments it was possible to obtain high k-values up to 120 with reasonably low leakage current.
Original languageEnglish
Pages (from-to)N1-N3
JournalElectrochemical and Solid-State Letters
Volume1
Issue number1
DOIs
Publication statusPublished - 2012

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    Blanquart, T., Kukli, K., Niinistö, J., Longo, V., Heikkilä, M., Ritala, M., & Leskelä, M. (2012). Optical and dielectrical characterization of atomic layer deposited Nb2O5 thin films. Electrochemical and Solid-State Letters, 1(1), N1-N3. https://doi.org/10.1149/2.002201ssl