Opportunities for plasma-assisted atomic layer deposition

W.M.M. Kessels, S.B.S. Heil, E. Langereis, J.L. Hemmen, van, H.C.M. Knoops, W. Keuning, M.C.M. Sanden, van de

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Abstract

Within the method of atomic layer deposition (ALD), additional reactivity can be delivered to the surface in the form of plasmaproduced species. The application of such a low-temperature plasma in the ALD cycle can therefore open up a processing parameter space that is unattainable by the strictly thermally driven process. In this contribution several possible benefits of plasmaassisted ALD will be reviewed showing bright prospect for plasma-assisted ALD for a large variety of applications, also far beyond the typical use in semiconductor devices.
Original languageEnglish
Pages (from-to)183-190
JournalECS Transactions
Volume3
Issue number15
DOIs
Publication statusPublished - 2007

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