Opportunities for plasma-assisted atomic layer deposition

W.M.M. Kessels; S.B.S. Heil; E. Langereis; J.L. Hemmen, van; H.C.M. Knoops; W. Keuning; M.C.M. Sanden, van de

doi:10.1149/1.2721487

Opportunities for plasma-assisted atomic layer deposition

W.M.M. Kessels, S.B.S. Heil, E. Langereis, J.L. Hemmen, van, H.C.M. Knoops, W. Keuning, M.C.M. Sanden, van de

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Abstract

Within the method of atomic layer deposition (ALD), additional reactivity can be delivered to the surface in the form of plasmaproduced species. The application of such a low-temperature plasma in the ALD cycle can therefore open up a processing parameter space that is unattainable by the strictly thermally driven process. In this contribution several possible benefits of plasmaassisted ALD will be reviewed showing bright prospect for plasma-assisted ALD for a large variety of applications, also far beyond the typical use in semiconductor devices.

Original language	English
Pages (from-to)	183-190
Journal	ECS Transactions
Volume	3
Issue number	15
DOIs	https://doi.org/10.1149/1.2721487 https://doi.org/10.1042/bst0030183
Publication status	Published - 2007

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@article{f5d1ae683e8341a0848642de7e2d46fc,

title = "Opportunities for plasma-assisted atomic layer deposition",

abstract = "Within the method of atomic layer deposition (ALD), additional reactivity can be delivered to the surface in the form of plasmaproduced species. The application of such a low-temperature plasma in the ALD cycle can therefore open up a processing parameter space that is unattainable by the strictly thermally driven process. In this contribution several possible benefits of plasmaassisted ALD will be reviewed showing bright prospect for plasma-assisted ALD for a large variety of applications, also far beyond the typical use in semiconductor devices.",

author = "W.M.M. Kessels and S.B.S. Heil and E. Langereis and {Hemmen, van}, J.L. and H.C.M. Knoops and W. Keuning and {Sanden, van de}, M.C.M.",

year = "2007",

doi = "10.1149/1.2721487",

language = "English",

volume = "3",

pages = "183--190",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

number = "15",

}

TY - JOUR

T1 - Opportunities for plasma-assisted atomic layer deposition

AU - Kessels, W.M.M.

AU - Heil, S.B.S.

AU - Langereis, E.

AU - Hemmen, van, J.L.

AU - Knoops, H.C.M.

AU - Keuning, W.

AU - Sanden, van de, M.C.M.

PY - 2007

Y1 - 2007

N2 - Within the method of atomic layer deposition (ALD), additional reactivity can be delivered to the surface in the form of plasmaproduced species. The application of such a low-temperature plasma in the ALD cycle can therefore open up a processing parameter space that is unattainable by the strictly thermally driven process. In this contribution several possible benefits of plasmaassisted ALD will be reviewed showing bright prospect for plasma-assisted ALD for a large variety of applications, also far beyond the typical use in semiconductor devices.

AB - Within the method of atomic layer deposition (ALD), additional reactivity can be delivered to the surface in the form of plasmaproduced species. The application of such a low-temperature plasma in the ALD cycle can therefore open up a processing parameter space that is unattainable by the strictly thermally driven process. In this contribution several possible benefits of plasmaassisted ALD will be reviewed showing bright prospect for plasma-assisted ALD for a large variety of applications, also far beyond the typical use in semiconductor devices.

U2 - 10.1149/1.2721487

DO - 10.1149/1.2721487

M3 - Article

SN - 1938-5862

VL - 3

SP - 183

EP - 190

JO - ECS Transactions

JF - ECS Transactions

IS - 15

ER -

Opportunities for plasma-assisted atomic layer deposition

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