On the width of the recombination zone in ambipolar organic field effect transistors

M. Kemerink, D.S.H. Charrier, E.C.P. Smits, S.G.J. Mathijssen, D.M. Leeuw, de, R.A.J. Janssen

Research output: Contribution to journalArticleAcademicpeer-review

29 Citations (Scopus)
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Abstract

The performance of organic light emitting field effect transistors is strongly influenced by the width of the recombination zone. We present an analytical model for the recombination profile. By assuming Langevin recombination, the recombination zone width W is found to be given by W=??4.34d??, with d and ?? the gate dielectric and accumulation layer thicknesses, respectively. The model compares favorably to both numerical calculations and measured surface potential profiles of an actual ambipolar device.
Original languageEnglish
Article number033312
Pages (from-to)033312-1/3
Number of pages3
JournalApplied Physics Letters
Volume93
Issue number3
DOIs
Publication statusPublished - 2008

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