On the variances of generation-recombination noise in a three-level system

A statistical treatment is given of the generation-recombination noise in a semiconductor with a conduction band and two traps X and Y. The system is described in terms of x and y, where x is half the harmonic mean of the numbers of occupied and empty traps X. A corresponding definition is given for y. The use of x and y makes the formalism very transparent. Simple, explicit relations are easily found, which can be further simplified by approximations depending on the ratios between N, x and y. We consider correlations and Burgess' theorem; time dependence and spectra are not discussed.