@inproceedings{a6ef9b1fc0f3428cb5b8cd1e7f7b0fdd,
title = "On the role of surface diffusion and its relation to the hydrogen incorporation during hydrogenated amorphous silicon growth",
abstract = "The incorporation of hydrogen in vacancies and at void surfaces during hydrogenated amorphous silicon growth from a remote expanding thermal plasma (ETP) is systematically studied by variation of the mass growth flux Gamma a-Si:H and substrate temp. Tsub. An evident relation between the void incorporation and the growth parameters Gamma a-Si:H and Tsub has been obsd. The authors speculate on a possible relation with the surface diffusion processes during deposition. An activation energy for surface diffusion during a-Si:H growth of 0.8-1.1 eV is obtained using this assertion, similar to the activation energy deduced from surface roughness evolution studies. For compact films hydrogen is predominantly present at vacancies, and a possible relation with the hydrogen removal mechanism during deposition is discussed.",
author = "A.H.M. Smets and W.M.M. Kessels and {Sanden, van de}, M.C.M.",
year = "2003",
language = "English",
isbn = "1-558-99699-0",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "461--466",
editor = "J.R. Abelson",
booktitle = "Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22-25, 2003, San Francisco, California, USA",
address = "United States",
}