On the origin of dark current in organic photodiodes

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Abstract

Minimizing the reverse bias dark current while retaining external quantum efficiency is crucial if the light detection sensitivity of organic photodiodes (OPDs) is to compete with inorganic photodetectors. However, a quantitative relationship between the magnitude of the dark current density under reverse bias (Jd) and the properties of the bulk heterojunction (BHJ) active layer has so far not been established. Here, a systematic analysis of Jd in state-of-the-art BHJ OPDs using five polymers with a range of energy levels and charge transport characteristics is presented. The magnitude and activation energy of Jd are explained using a model that assumes charge injection from the metal contacts into an energetically disordered semiconductor. By relating Jd to material parameters, insights into the origin of Jd are obtained that enable the future selection of successful OPD materials.

Original languageEnglish
Article number1901568
Number of pages7
JournalAdvanced Optical Materials
Volume2019
DOIs
Publication statusE-pub ahead of print - 1 Nov 2019

Fingerprint

Dark currents
dark current
Photodiodes
photodiodes
Heterojunctions
heterojunctions
Charge injection
Photodetectors
retaining
Quantum efficiency
Electron energy levels
photometers
Charge transfer
quantum efficiency
electric contacts
Polymers
Current density
Activation energy
energy levels
Metals

Keywords

  • bulk heterojunction
  • charge injection
  • dark current
  • organic photodiodes
  • reverse bias

Cite this

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title = "On the origin of dark current in organic photodiodes",
abstract = "Minimizing the reverse bias dark current while retaining external quantum efficiency is crucial if the light detection sensitivity of organic photodiodes (OPDs) is to compete with inorganic photodetectors. However, a quantitative relationship between the magnitude of the dark current density under reverse bias (Jd) and the properties of the bulk heterojunction (BHJ) active layer has so far not been established. Here, a systematic analysis of Jd in state-of-the-art BHJ OPDs using five polymers with a range of energy levels and charge transport characteristics is presented. The magnitude and activation energy of Jd are explained using a model that assumes charge injection from the metal contacts into an energetically disordered semiconductor. By relating Jd to material parameters, insights into the origin of Jd are obtained that enable the future selection of successful OPD materials.",
keywords = "bulk heterojunction, charge injection, dark current, organic photodiodes, reverse bias",
author = "Giulio Simone and Dyson, {Matthew J.} and Weijtens, {Christ H.L.} and Meskers, {Stefan C.J.} and Reinder Coehoorn and Janssen, {Ren{\'e} A.J.} and Gelinck, {Gerwin H.}",
year = "2019",
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language = "English",
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journal = "Advanced Optical Materials",
issn = "2195-1071",
publisher = "Wiley",

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TY - JOUR

T1 - On the origin of dark current in organic photodiodes

AU - Simone, Giulio

AU - Dyson, Matthew J.

AU - Weijtens, Christ H.L.

AU - Meskers, Stefan C.J.

AU - Coehoorn, Reinder

AU - Janssen, René A.J.

AU - Gelinck, Gerwin H.

PY - 2019/11/1

Y1 - 2019/11/1

N2 - Minimizing the reverse bias dark current while retaining external quantum efficiency is crucial if the light detection sensitivity of organic photodiodes (OPDs) is to compete with inorganic photodetectors. However, a quantitative relationship between the magnitude of the dark current density under reverse bias (Jd) and the properties of the bulk heterojunction (BHJ) active layer has so far not been established. Here, a systematic analysis of Jd in state-of-the-art BHJ OPDs using five polymers with a range of energy levels and charge transport characteristics is presented. The magnitude and activation energy of Jd are explained using a model that assumes charge injection from the metal contacts into an energetically disordered semiconductor. By relating Jd to material parameters, insights into the origin of Jd are obtained that enable the future selection of successful OPD materials.

AB - Minimizing the reverse bias dark current while retaining external quantum efficiency is crucial if the light detection sensitivity of organic photodiodes (OPDs) is to compete with inorganic photodetectors. However, a quantitative relationship between the magnitude of the dark current density under reverse bias (Jd) and the properties of the bulk heterojunction (BHJ) active layer has so far not been established. Here, a systematic analysis of Jd in state-of-the-art BHJ OPDs using five polymers with a range of energy levels and charge transport characteristics is presented. The magnitude and activation energy of Jd are explained using a model that assumes charge injection from the metal contacts into an energetically disordered semiconductor. By relating Jd to material parameters, insights into the origin of Jd are obtained that enable the future selection of successful OPD materials.

KW - bulk heterojunction

KW - charge injection

KW - dark current

KW - organic photodiodes

KW - reverse bias

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