Abstract
Minimizing the reverse bias dark current while retaining external quantum efficiency is crucial if the light detection sensitivity of organic photodiodes (OPDs) is to compete with inorganic photodetectors. However, a quantitative relationship between the magnitude of the dark current density under reverse bias (Jd) and the properties of the bulk heterojunction (BHJ) active layer has so far not been established. Here, a systematic analysis of Jd in state-of-the-art BHJ OPDs using five polymers with a range of energy levels and charge transport characteristics is presented. The magnitude and activation energy of Jd are explained using a model that assumes charge injection from the metal contacts into an energetically disordered semiconductor. By relating Jd to material parameters, insights into the origin of Jd are obtained that enable the future selection of successful OPD materials.
| Original language | English |
|---|---|
| Article number | 1901568 |
| Number of pages | 7 |
| Journal | Advanced Optical Materials |
| Volume | 2019 |
| DOIs | |
| Publication status | E-pub ahead of print - 1 Nov 2019 |
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Keywords
- bulk heterojunction
- charge injection
- dark current
- organic photodiodes
- reverse bias
Cite this
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On the origin of dark current in organic photodiodes. / Simone, Giulio; Dyson, Matthew J.; Weijtens, Christ H.L.; Meskers, Stefan C.J.; Coehoorn, Reinder; Janssen, René A.J. (Corresponding author); Gelinck, Gerwin H. (Corresponding author).
In: Advanced Optical Materials, Vol. 2019, 1901568, 01.11.2019.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - On the origin of dark current in organic photodiodes
AU - Simone, Giulio
AU - Dyson, Matthew J.
AU - Weijtens, Christ H.L.
AU - Meskers, Stefan C.J.
AU - Coehoorn, Reinder
AU - Janssen, René A.J.
AU - Gelinck, Gerwin H.
PY - 2019/11/1
Y1 - 2019/11/1
N2 - Minimizing the reverse bias dark current while retaining external quantum efficiency is crucial if the light detection sensitivity of organic photodiodes (OPDs) is to compete with inorganic photodetectors. However, a quantitative relationship between the magnitude of the dark current density under reverse bias (Jd) and the properties of the bulk heterojunction (BHJ) active layer has so far not been established. Here, a systematic analysis of Jd in state-of-the-art BHJ OPDs using five polymers with a range of energy levels and charge transport characteristics is presented. The magnitude and activation energy of Jd are explained using a model that assumes charge injection from the metal contacts into an energetically disordered semiconductor. By relating Jd to material parameters, insights into the origin of Jd are obtained that enable the future selection of successful OPD materials.
AB - Minimizing the reverse bias dark current while retaining external quantum efficiency is crucial if the light detection sensitivity of organic photodiodes (OPDs) is to compete with inorganic photodetectors. However, a quantitative relationship between the magnitude of the dark current density under reverse bias (Jd) and the properties of the bulk heterojunction (BHJ) active layer has so far not been established. Here, a systematic analysis of Jd in state-of-the-art BHJ OPDs using five polymers with a range of energy levels and charge transport characteristics is presented. The magnitude and activation energy of Jd are explained using a model that assumes charge injection from the metal contacts into an energetically disordered semiconductor. By relating Jd to material parameters, insights into the origin of Jd are obtained that enable the future selection of successful OPD materials.
KW - bulk heterojunction
KW - charge injection
KW - dark current
KW - organic photodiodes
KW - reverse bias
UR - http://www.scopus.com/inward/record.url?scp=85074816346&partnerID=8YFLogxK
U2 - 10.1002/adom.201901568
DO - 10.1002/adom.201901568
M3 - Article
AN - SCOPUS:85074816346
VL - 2019
JO - Advanced Optical Materials
JF - Advanced Optical Materials
SN - 2195-1071
M1 - 1901568
ER -