On the hydrogenation of Poly-Si passivating contacts by Al2O3 and SiNx thin films

Bas W.H. van de Loo; Bart Macco; Manuel Schnabel; Maciej K. Stodolny; Agnes A. Mewe; David L. Young; William Nemeth; Paul Stradins; Wilhelmus M.M. Kessels

doi:10.1016/j.solmat.2020.110592

On the hydrogenation of Poly-Si passivating contacts by Al₂O₃ and SiN_x thin films

Bas W.H. van de Loo, Bart Macco (Corresponding author), Manuel Schnabel, Maciej K. Stodolny, Agnes A. Mewe, David L. Young, William Nemeth, Paul Stradins, Wilhelmus M.M. Kessels

Research output: Contribution to journal › Article › Academic › peer-review

67 Citations (Scopus)

Abstract

Doped polycrystalline silicon (poly-Si), when coupled with a thin SiO₂ interlayer, is of large interest for crystalline silicon (c-Si) solar cells due to its outstanding passivating contact properties. To reach high levels of surface passivation, it is pivotal to hydrogenate the poly-Si and the underlying c-Si/SiO₂ interface. This can be done by capping the poly-Si with a hydrogen-containing dielectric layer such as Al₂O₃ or SiN_x, followed by a thermal anneal. On the basis of recent research, this work addresses several aspects of such hydrogenation by dielectric materials, including the effect of the annealing ambient, the thermal stability and reversibility of hydrogenation, the poly-Si doping level and c-Si surface texture. Additionally, the implementation of hydrogenation of poly-Si by dielectric materials in solar cells is discussed.

Original language	English
Article number	110592
Number of pages	6
Journal	Solar Energy Materials and Solar Cells
Volume	215
DOIs	https://doi.org/10.1016/j.solmat.2020.110592
Publication status	Published - 15 Sept 2020

Funding

The authors acknowledge J. J. L. M. Meulendijks, C. O. van Bommel, C.A.A. van Helvoirt, J. van Gerwen and J. J. A. Zeebregts for their technical support. The authors gratefully acknowledge Solliance for funding the TEM facility. We acknowledge financial support for this research from the Top consortia for Knowledge and Innovation (TKI) Solar Energy programs RADAR ( TEUE116905 ), AAA ( 1409104 ), IBCsense ( TEZ0214004 ), Miracle ( TEUE116139 ), NexPas ( TEZ0214002 ) and Antilope ( TEID215011 ) of the Ministry of Economic Affairs of The Netherlands.

Funders	Funder number
Top consortia for Knowledge and Innovation	TEUE116905
Ministerie van Economische Zaken en Klimaat

Keywords

Hydrogen
Passivating contacts
Polysilicon
Solar cells
Surface passivation

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solmat.2020.110592

Cite this

@article{161c60832e7548e396470aa5a982b924,

title = "On the hydrogenation of Poly-Si passivating contacts by Al2O3 and SiNx thin films",

abstract = "Doped polycrystalline silicon (poly-Si), when coupled with a thin SiO2 interlayer, is of large interest for crystalline silicon (c-Si) solar cells due to its outstanding passivating contact properties. To reach high levels of surface passivation, it is pivotal to hydrogenate the poly-Si and the underlying c-Si/SiO2 interface. This can be done by capping the poly-Si with a hydrogen-containing dielectric layer such as Al2O3 or SiNx, followed by a thermal anneal. On the basis of recent research, this work addresses several aspects of such hydrogenation by dielectric materials, including the effect of the annealing ambient, the thermal stability and reversibility of hydrogenation, the poly-Si doping level and c-Si surface texture. Additionally, the implementation of hydrogenation of poly-Si by dielectric materials in solar cells is discussed.",

keywords = "Hydrogen, Passivating contacts, Polysilicon, Solar cells, Surface passivation",

author = "{van de Loo}, {Bas W.H.} and Bart Macco and Manuel Schnabel and Stodolny, {Maciej K.} and Mewe, {Agnes A.} and Young, {David L.} and William Nemeth and Paul Stradins and Kessels, {Wilhelmus M.M.}",

year = "2020",

month = sep,

day = "15",

doi = "10.1016/j.solmat.2020.110592",

language = "English",

volume = "215",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - On the hydrogenation of Poly-Si passivating contacts by Al2O3 and SiNx thin films

AU - van de Loo, Bas W.H.

AU - Macco, Bart

AU - Schnabel, Manuel

AU - Stodolny, Maciej K.

AU - Mewe, Agnes A.

AU - Young, David L.

AU - Nemeth, William

AU - Stradins, Paul

AU - Kessels, Wilhelmus M.M.

PY - 2020/9/15

Y1 - 2020/9/15

N2 - Doped polycrystalline silicon (poly-Si), when coupled with a thin SiO2 interlayer, is of large interest for crystalline silicon (c-Si) solar cells due to its outstanding passivating contact properties. To reach high levels of surface passivation, it is pivotal to hydrogenate the poly-Si and the underlying c-Si/SiO2 interface. This can be done by capping the poly-Si with a hydrogen-containing dielectric layer such as Al2O3 or SiNx, followed by a thermal anneal. On the basis of recent research, this work addresses several aspects of such hydrogenation by dielectric materials, including the effect of the annealing ambient, the thermal stability and reversibility of hydrogenation, the poly-Si doping level and c-Si surface texture. Additionally, the implementation of hydrogenation of poly-Si by dielectric materials in solar cells is discussed.

AB - Doped polycrystalline silicon (poly-Si), when coupled with a thin SiO2 interlayer, is of large interest for crystalline silicon (c-Si) solar cells due to its outstanding passivating contact properties. To reach high levels of surface passivation, it is pivotal to hydrogenate the poly-Si and the underlying c-Si/SiO2 interface. This can be done by capping the poly-Si with a hydrogen-containing dielectric layer such as Al2O3 or SiNx, followed by a thermal anneal. On the basis of recent research, this work addresses several aspects of such hydrogenation by dielectric materials, including the effect of the annealing ambient, the thermal stability and reversibility of hydrogenation, the poly-Si doping level and c-Si surface texture. Additionally, the implementation of hydrogenation of poly-Si by dielectric materials in solar cells is discussed.

KW - Hydrogen

KW - Passivating contacts

KW - Polysilicon

KW - Solar cells

KW - Surface passivation

UR - http://www.scopus.com/inward/record.url?scp=85084748858&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2020.110592

DO - 10.1016/j.solmat.2020.110592

M3 - Article

AN - SCOPUS:85084748858

SN - 0927-0248

VL - 215

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

M1 - 110592

ER -

On the hydrogenation of Poly-Si passivating contacts by Al₂O₃ and SiN_x thin films

Abstract

Funding

Keywords

UN SDGs

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Data for: On the Hydrogenation of Poly-Si Passivating Contacts by Al2O3 and SiNx Thin Films

Cite this

On the hydrogenation of Poly-Si passivating contacts by Al2O3 and SiNx thin films

Abstract

Funding

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

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Data for: On the Hydrogenation of Poly-Si Passivating Contacts by Al2O3 and SiNx Thin Films

Cite this

On the hydrogenation of Poly-Si passivating contacts by Al₂O₃ and SiN_x thin films