On the film microstructure control by means of PE-CVD and PA-ALD

M. Creatore, E. Langereis, N.M. Terlinden, J.L. Hemmen, van, W.M.M. Kessels, M.C.M. Sanden, van de

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Abstract

The ultimate control on film growth represents a challenge in PECVD: interphase, film structure and surface roughness are affected by the surface energy, growth and ion fluxes and ion energy. Such control is desired for moisture diffusion barriers, where an irregular polymer surface and defects determine the performance. Routes for microstructure control in PECVD SiO2 barrier layers are presented. The addition of ion bombardment to a remote plasma with a gradient in growth flux allows tuning the film microstructure during growth with the purpose of engineering an adhesive interphase and a dense SiO2 barrier. The role of ion bombardment on the film microstructure is here investigated by means of ellipsometric porosimetry, which monitors the refractive index change due to the adsorption (and desorption) of ethanol vapors in the volume of macro-meso-micro pores in the layer. From the analysis of the adsorption isotherm and the presence of hysteresis during the desorption step as a function of the equilibrium partial pressure, the open porosity can be determined. Recently, we have also explored atomic layer deposition (ALD) for a virtually ultimate control on film microstructure. Plasma can assisted ALD (Plasma- assisted ALD) by providing radicals, replacing one precursor (e.g., O radicals replacing H2O in Al2O3 deposition). 20 nmthick plasma- assisted ALD Al2O3 layers are characterized by water vapor transmission rates (WVTRs) as low as 10-3 g/m2day.
Original languageEnglish
Title of host publicationProceedings of the 18th international symposium on plasma chemistry (ISPC 18) 26-31 August 2007, Kyoto, Japan
EditorsK. Tachibana, O. Takai, K. Ono, T. Shirafuji
Place of PublicationKyoto, Japan
PublisherKyoto University
Pages27A-P3-1/4
ISBN (Print)978-4-9903773-4-2
Publication statusPublished - 2007

Fingerprint

atomic layer epitaxy
vapor deposition
microstructure
desorption
bombardment
ions
porosity
barrier layers
moisture
adhesives
surface energy
partial pressure
water vapor
surface roughness
isotherms
ethyl alcohol
roughness
hysteresis
tuning
routes

Cite this

Creatore, M., Langereis, E., Terlinden, N. M., Hemmen, van, J. L., Kessels, W. M. M., & Sanden, van de, M. C. M. (2007). On the film microstructure control by means of PE-CVD and PA-ALD. In K. Tachibana, O. Takai, K. Ono, & T. Shirafuji (Eds.), Proceedings of the 18th international symposium on plasma chemistry (ISPC 18) 26-31 August 2007, Kyoto, Japan (pp. 27A-P3-1/4). Kyoto, Japan: Kyoto University.
Creatore, M. ; Langereis, E. ; Terlinden, N.M. ; Hemmen, van, J.L. ; Kessels, W.M.M. ; Sanden, van de, M.C.M. / On the film microstructure control by means of PE-CVD and PA-ALD. Proceedings of the 18th international symposium on plasma chemistry (ISPC 18) 26-31 August 2007, Kyoto, Japan. editor / K. Tachibana ; O. Takai ; K. Ono ; T. Shirafuji. Kyoto, Japan : Kyoto University, 2007. pp. 27A-P3-1/4
@inproceedings{65bd677b0bf14eb399bf3f1e34545950,
title = "On the film microstructure control by means of PE-CVD and PA-ALD",
abstract = "The ultimate control on film growth represents a challenge in PECVD: interphase, film structure and surface roughness are affected by the surface energy, growth and ion fluxes and ion energy. Such control is desired for moisture diffusion barriers, where an irregular polymer surface and defects determine the performance. Routes for microstructure control in PECVD SiO2 barrier layers are presented. The addition of ion bombardment to a remote plasma with a gradient in growth flux allows tuning the film microstructure during growth with the purpose of engineering an adhesive interphase and a dense SiO2 barrier. The role of ion bombardment on the film microstructure is here investigated by means of ellipsometric porosimetry, which monitors the refractive index change due to the adsorption (and desorption) of ethanol vapors in the volume of macro-meso-micro pores in the layer. From the analysis of the adsorption isotherm and the presence of hysteresis during the desorption step as a function of the equilibrium partial pressure, the open porosity can be determined. Recently, we have also explored atomic layer deposition (ALD) for a virtually ultimate control on film microstructure. Plasma can assisted ALD (Plasma- assisted ALD) by providing radicals, replacing one precursor (e.g., O radicals replacing H2O in Al2O3 deposition). 20 nmthick plasma- assisted ALD Al2O3 layers are characterized by water vapor transmission rates (WVTRs) as low as 10-3 g/m2day.",
author = "M. Creatore and E. Langereis and N.M. Terlinden and {Hemmen, van}, J.L. and W.M.M. Kessels and {Sanden, van de}, M.C.M.",
year = "2007",
language = "English",
isbn = "978-4-9903773-4-2",
pages = "27A--P3--1/4",
editor = "K. Tachibana and O. Takai and K. Ono and T. Shirafuji",
booktitle = "Proceedings of the 18th international symposium on plasma chemistry (ISPC 18) 26-31 August 2007, Kyoto, Japan",
publisher = "Kyoto University",

}

Creatore, M, Langereis, E, Terlinden, NM, Hemmen, van, JL, Kessels, WMM & Sanden, van de, MCM 2007, On the film microstructure control by means of PE-CVD and PA-ALD. in K Tachibana, O Takai, K Ono & T Shirafuji (eds), Proceedings of the 18th international symposium on plasma chemistry (ISPC 18) 26-31 August 2007, Kyoto, Japan. Kyoto University, Kyoto, Japan, pp. 27A-P3-1/4.

On the film microstructure control by means of PE-CVD and PA-ALD. / Creatore, M.; Langereis, E.; Terlinden, N.M.; Hemmen, van, J.L.; Kessels, W.M.M.; Sanden, van de, M.C.M.

Proceedings of the 18th international symposium on plasma chemistry (ISPC 18) 26-31 August 2007, Kyoto, Japan. ed. / K. Tachibana; O. Takai; K. Ono; T. Shirafuji. Kyoto, Japan : Kyoto University, 2007. p. 27A-P3-1/4.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

TY - GEN

T1 - On the film microstructure control by means of PE-CVD and PA-ALD

AU - Creatore, M.

AU - Langereis, E.

AU - Terlinden, N.M.

AU - Hemmen, van, J.L.

AU - Kessels, W.M.M.

AU - Sanden, van de, M.C.M.

PY - 2007

Y1 - 2007

N2 - The ultimate control on film growth represents a challenge in PECVD: interphase, film structure and surface roughness are affected by the surface energy, growth and ion fluxes and ion energy. Such control is desired for moisture diffusion barriers, where an irregular polymer surface and defects determine the performance. Routes for microstructure control in PECVD SiO2 barrier layers are presented. The addition of ion bombardment to a remote plasma with a gradient in growth flux allows tuning the film microstructure during growth with the purpose of engineering an adhesive interphase and a dense SiO2 barrier. The role of ion bombardment on the film microstructure is here investigated by means of ellipsometric porosimetry, which monitors the refractive index change due to the adsorption (and desorption) of ethanol vapors in the volume of macro-meso-micro pores in the layer. From the analysis of the adsorption isotherm and the presence of hysteresis during the desorption step as a function of the equilibrium partial pressure, the open porosity can be determined. Recently, we have also explored atomic layer deposition (ALD) for a virtually ultimate control on film microstructure. Plasma can assisted ALD (Plasma- assisted ALD) by providing radicals, replacing one precursor (e.g., O radicals replacing H2O in Al2O3 deposition). 20 nmthick plasma- assisted ALD Al2O3 layers are characterized by water vapor transmission rates (WVTRs) as low as 10-3 g/m2day.

AB - The ultimate control on film growth represents a challenge in PECVD: interphase, film structure and surface roughness are affected by the surface energy, growth and ion fluxes and ion energy. Such control is desired for moisture diffusion barriers, where an irregular polymer surface and defects determine the performance. Routes for microstructure control in PECVD SiO2 barrier layers are presented. The addition of ion bombardment to a remote plasma with a gradient in growth flux allows tuning the film microstructure during growth with the purpose of engineering an adhesive interphase and a dense SiO2 barrier. The role of ion bombardment on the film microstructure is here investigated by means of ellipsometric porosimetry, which monitors the refractive index change due to the adsorption (and desorption) of ethanol vapors in the volume of macro-meso-micro pores in the layer. From the analysis of the adsorption isotherm and the presence of hysteresis during the desorption step as a function of the equilibrium partial pressure, the open porosity can be determined. Recently, we have also explored atomic layer deposition (ALD) for a virtually ultimate control on film microstructure. Plasma can assisted ALD (Plasma- assisted ALD) by providing radicals, replacing one precursor (e.g., O radicals replacing H2O in Al2O3 deposition). 20 nmthick plasma- assisted ALD Al2O3 layers are characterized by water vapor transmission rates (WVTRs) as low as 10-3 g/m2day.

M3 - Conference contribution

SN - 978-4-9903773-4-2

SP - 27A-P3-1/4

BT - Proceedings of the 18th international symposium on plasma chemistry (ISPC 18) 26-31 August 2007, Kyoto, Japan

A2 - Tachibana, K.

A2 - Takai, O.

A2 - Ono, K.

A2 - Shirafuji, T.

PB - Kyoto University

CY - Kyoto, Japan

ER -

Creatore M, Langereis E, Terlinden NM, Hemmen, van JL, Kessels WMM, Sanden, van de MCM. On the film microstructure control by means of PE-CVD and PA-ALD. In Tachibana K, Takai O, Ono K, Shirafuji T, editors, Proceedings of the 18th international symposium on plasma chemistry (ISPC 18) 26-31 August 2007, Kyoto, Japan. Kyoto, Japan: Kyoto University. 2007. p. 27A-P3-1/4