On the effect of the underlying ZnO : Al layer on the crystallization kinetics of hydrognated amorphous silicon

K. Sharma, M. Ponomarev, M.C.M. Sanden, van de, M. Creatore

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Abstract

In this contribution, we analyze the thickness effect of the underlying aluminum doped-zinc oxide (ZnO:Al) layers on the structural properties and crystallization kinetics of hydrogenated amorphous silicon (a-Si:H) thin films. It is shown that the disorder in as-deposited a-Si:H films, as probed by Raman spectroscopy, decreased with increasing ZnO:Al roughness. This caused an earlier nucleation upon crystallization when compared to a-Si:H layers directly grown on SiNx-coated glass.
Original languageEnglish
Article number212107
Pages (from-to)212107-1/4
Number of pages4
JournalApplied Physics Letters
Volume102
Issue number21
DOIs
Publication statusPublished - 2013

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