On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma

R. J. Severens; M. C.M. van de Sanden; H. J.M. Verhoeven; J. Bastiaanssen; D. C. Schram

doi:10.1557/PROC-420-341

On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma

R. J. Severens, M. C.M. van de Sanden, H. J.M. Verhoeven, J. Bastiaanssen, D. C. Schram

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Fast (7 nm/s) deposition of amorphous hydrogenated silicon with a midgap density of states less than 10¹⁶ cm^-3 and an Urbach energy of 50 meV has been achieved using a remote argon/hydrogen plasma. The plasma is generated in a dc thermal arc (0.5 bar, 5 kW) and expands into a low pressure chamber (20 Pa) thus creating a plasma jet with a typical flow velocity of 10³ m/s. Pure silane is injected into the jet immediately after the nozzle, in a typical flow mixture of Ar:H₂:SiH₄=55:10:10 scc/s. As the electron temperature in the recombining plasma is low (typ. 0.3 eV), silane radicals are thought to be produced mainly by hydrogen abstraction. Material quality in terms of refractive index, conductivity, microstructure parameter and optical bandgap was found to increase monotonously with substrate temperature, even up to 350 °C; for practically all low growth rate deposition schemes an optimum around 250°C is observed. It will be argued that this behavior is consistent with a simple kinetic model involving physisorption and hopping, growth on dangling bonds and thermal desorption of hydrogen.

Original language	English
Title of host publication	Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A.
Editors	M. Hack
Place of Publication	Pittsburgh, PA, USA
Publisher	Materials Research Society
Pages	341-346
Number of pages	6
ISBN (Print)	1-55899-323-1
DOIs	https://doi.org/10.1557/PROC-420-341
Publication status	Published - 1 Dec 1996
Event	1996 MRS Spring Meeting & Exhibit - San Francisco, United States Duration: 8 Apr 1996 → 12 Apr 1996 https://www.mrs.org/spring1996

Publication series

Name	Materials Research Society Symposium - Proceedings
Volume	420
ISSN (Print)	0272-9172

Conference

Conference	1996 MRS Spring Meeting & Exhibit
Country/Territory	United States
City	San Francisco
Period	8/04/96 → 12/04/96
Other	Symposium held at the 1996 MRS Spring Meeting
Internet address	https://www.mrs.org/spring1996

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Severens, R. J., van de Sanden, M. C. M., Verhoeven, H. J. M., Bastiaanssen, J., & Schram, D. C. (1996). On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma. In M. Hack (Ed.), Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A. (pp. 341-346). (Materials Research Society Symposium - Proceedings; Vol. 420). Materials Research Society. https://doi.org/10.1557/PROC-420-341

Severens, R. J. ; van de Sanden, M. C.M. ; Verhoeven, H. J.M. ; Bastiaanssen, J. ; Schram, D. C. / On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma. Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A.. editor / M. Hack. Pittsburgh, PA, USA : Materials Research Society, 1996. pp. 341-346 (Materials Research Society Symposium - Proceedings).

@inproceedings{e04698f15d204c45bdcd8bfdb6f158ab,

title = "On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma",

abstract = "Fast (7 nm/s) deposition of amorphous hydrogenated silicon with a midgap density of states less than 1016 cm-3 and an Urbach energy of 50 meV has been achieved using a remote argon/hydrogen plasma. The plasma is generated in a dc thermal arc (0.5 bar, 5 kW) and expands into a low pressure chamber (20 Pa) thus creating a plasma jet with a typical flow velocity of 103 m/s. Pure silane is injected into the jet immediately after the nozzle, in a typical flow mixture of Ar:H2:SiH4=55:10:10 scc/s. As the electron temperature in the recombining plasma is low (typ. 0.3 eV), silane radicals are thought to be produced mainly by hydrogen abstraction. Material quality in terms of refractive index, conductivity, microstructure parameter and optical bandgap was found to increase monotonously with substrate temperature, even up to 350 °C; for practically all low growth rate deposition schemes an optimum around 250°C is observed. It will be argued that this behavior is consistent with a simple kinetic model involving physisorption and hopping, growth on dangling bonds and thermal desorption of hydrogen.",

author = "Severens, {R. J.} and {van de Sanden}, {M. C.M.} and Verhoeven, {H. J.M.} and J. Bastiaanssen and Schram, {D. C.}",

year = "1996",

month = dec,

day = "1",

doi = "10.1557/PROC-420-341",

language = "English",

isbn = "1-55899-323-1 ",

series = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

pages = "341--346",

editor = "M. Hack",

booktitle = "Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A.",

address = "United States",

note = "1996 MRS Spring Meeting & Exhibit ; Conference date: 08-04-1996 Through 12-04-1996",

url = "https://www.mrs.org/spring1996",

}

Severens, RJ, van de Sanden, MCM, Verhoeven, HJM, Bastiaanssen, J & Schram, DC 1996, On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma. in M Hack (ed.), Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A.. Materials Research Society Symposium - Proceedings, vol. 420, Materials Research Society, Pittsburgh, PA, USA, pp. 341-346, 1996 MRS Spring Meeting & Exhibit, San Francisco, California, United States, 8/04/96. https://doi.org/10.1557/PROC-420-341

On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma. / Severens, R. J.; van de Sanden, M. C.M.; Verhoeven, H. J.M.; Bastiaanssen, J.; Schram, D. C.

Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A.. ed. / M. Hack. Pittsburgh, PA, USA : Materials Research Society, 1996. p. 341-346 (Materials Research Society Symposium - Proceedings; Vol. 420).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma

AU - Severens, R. J.

AU - van de Sanden, M. C.M.

AU - Verhoeven, H. J.M.

AU - Bastiaanssen, J.

AU - Schram, D. C.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - Fast (7 nm/s) deposition of amorphous hydrogenated silicon with a midgap density of states less than 1016 cm-3 and an Urbach energy of 50 meV has been achieved using a remote argon/hydrogen plasma. The plasma is generated in a dc thermal arc (0.5 bar, 5 kW) and expands into a low pressure chamber (20 Pa) thus creating a plasma jet with a typical flow velocity of 103 m/s. Pure silane is injected into the jet immediately after the nozzle, in a typical flow mixture of Ar:H2:SiH4=55:10:10 scc/s. As the electron temperature in the recombining plasma is low (typ. 0.3 eV), silane radicals are thought to be produced mainly by hydrogen abstraction. Material quality in terms of refractive index, conductivity, microstructure parameter and optical bandgap was found to increase monotonously with substrate temperature, even up to 350 °C; for practically all low growth rate deposition schemes an optimum around 250°C is observed. It will be argued that this behavior is consistent with a simple kinetic model involving physisorption and hopping, growth on dangling bonds and thermal desorption of hydrogen.

AB - Fast (7 nm/s) deposition of amorphous hydrogenated silicon with a midgap density of states less than 1016 cm-3 and an Urbach energy of 50 meV has been achieved using a remote argon/hydrogen plasma. The plasma is generated in a dc thermal arc (0.5 bar, 5 kW) and expands into a low pressure chamber (20 Pa) thus creating a plasma jet with a typical flow velocity of 103 m/s. Pure silane is injected into the jet immediately after the nozzle, in a typical flow mixture of Ar:H2:SiH4=55:10:10 scc/s. As the electron temperature in the recombining plasma is low (typ. 0.3 eV), silane radicals are thought to be produced mainly by hydrogen abstraction. Material quality in terms of refractive index, conductivity, microstructure parameter and optical bandgap was found to increase monotonously with substrate temperature, even up to 350 °C; for practically all low growth rate deposition schemes an optimum around 250°C is observed. It will be argued that this behavior is consistent with a simple kinetic model involving physisorption and hopping, growth on dangling bonds and thermal desorption of hydrogen.

UR - http://www.scopus.com/inward/record.url?scp=0030383224&partnerID=8YFLogxK

U2 - 10.1557/PROC-420-341

DO - 10.1557/PROC-420-341

M3 - Conference contribution

SN - 1-55899-323-1

T3 - Materials Research Society Symposium - Proceedings

SP - 341

EP - 346

BT - Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A.

A2 - Hack, M.

PB - Materials Research Society

CY - Pittsburgh, PA, USA

T2 - 1996 MRS Spring Meeting & Exhibit

Y2 - 8 April 1996 through 12 April 1996

ER -

Severens RJ, van de Sanden MCM, Verhoeven HJM, Bastiaanssen J, Schram DC. On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma. In Hack M, editor, Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A.. Pittsburgh, PA, USA: Materials Research Society. 1996. p. 341-346. (Materials Research Society Symposium - Proceedings). https://doi.org/10.1557/PROC-420-341

On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma

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