On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma

R. J. Severens, M. C.M. van de Sanden, H. J.M. Verhoeven, J. Bastiaanssen, D. C. Schram

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Fast (7 nm/s) deposition of amorphous hydrogenated silicon with a midgap density of states less than 1016 cm-3 and an Urbach energy of 50 meV has been achieved using a remote argon/hydrogen plasma. The plasma is generated in a dc thermal arc (0.5 bar, 5 kW) and expands into a low pressure chamber (20 Pa) thus creating a plasma jet with a typical flow velocity of 103 m/s. Pure silane is injected into the jet immediately after the nozzle, in a typical flow mixture of Ar:H2:SiH4=55:10:10 scc/s. As the electron temperature in the recombining plasma is low (typ. 0.3 eV), silane radicals are thought to be produced mainly by hydrogen abstraction. Material quality in terms of refractive index, conductivity, microstructure parameter and optical bandgap was found to increase monotonously with substrate temperature, even up to 350 °C; for practically all low growth rate deposition schemes an optimum around 250°C is observed. It will be argued that this behavior is consistent with a simple kinetic model involving physisorption and hopping, growth on dangling bonds and thermal desorption of hydrogen.

Original languageEnglish
Title of host publicationAmorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A.
EditorsM. Hack
Place of PublicationPittsburgh, PA, USA
PublisherMaterials Research Society
Number of pages6
ISBN (Print)1-55899-323-1
Publication statusPublished - 1 Dec 1996
Event1996 MRS Spring Meeting & Exhibit - San Francisco, United States
Duration: 8 Apr 199612 Apr 1996

Publication series

NameMaterials Research Society Symposium - Proceedings
ISSN (Print)0272-9172


Conference1996 MRS Spring Meeting & Exhibit
Country/TerritoryUnited States
CitySan Francisco
OtherSymposium held at the 1996 MRS Spring Meeting
Internet address


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