Abstract
Fast (7 nm/s) deposition of amorphous hydrogenated silicon with a midgap density of states less than 1016 cm-3 and an Urbach energy of 50 meV has been achieved using a remote argon/hydrogen plasma. The plasma is generated in a dc thermal arc (0.5 bar, 5 kW) and expands into a low pressure chamber (20 Pa) thus creating a plasma jet with a typical flow velocity of 103 m/s. Pure silane is injected into the jet immediately after the nozzle, in a typical flow mixture of Ar:H2:SiH4=55:10:10 scc/s. As the electron temperature in the recombining plasma is low (typ. 0.3 eV), silane radicals are thought to be produced mainly by hydrogen abstraction. Material quality in terms of refractive index, conductivity, microstructure parameter and optical bandgap was found to increase monotonously with substrate temperature, even up to 350 °C; for practically all low growth rate deposition schemes an optimum around 250°C is observed. It will be argued that this behavior is consistent with a simple kinetic model involving physisorption and hopping, growth on dangling bonds and thermal desorption of hydrogen.
| Original language | English |
|---|---|
| Title of host publication | Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A. |
| Editors | M. Hack |
| Place of Publication | Pittsburgh, PA, USA |
| Publisher | Materials Research Society |
| Pages | 341-346 |
| Number of pages | 6 |
| ISBN (Print) | 1-55899-323-1 |
| DOIs | |
| Publication status | Published - 1 Dec 1996 |
| Event | Amorphous Silicon Technology 1996, April 8-12, 1996, San Francisco, CA, USA - San Francisco, CA, United States Duration: 8 Apr 1996 → 12 Apr 1996 |
Publication series
| Name | Materials Research Society Symposium - Proceedings |
|---|---|
| Volume | 420 |
| ISSN (Print) | 0272-9172 |
Conference
| Conference | Amorphous Silicon Technology 1996, April 8-12, 1996, San Francisco, CA, USA |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 8/04/96 → 12/04/96 |
| Other | Symposium held at the 1996 MRS Spring Meeting |
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On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma. / Severens, R. J.; van de Sanden, M. C.M.; Verhoeven, H. J.M.; Bastiaanssen, J.; Schram, D. C.
Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A.. ed. / M. Hack. Pittsburgh, PA, USA : Materials Research Society, 1996. p. 341-346 (Materials Research Society Symposium - Proceedings; Vol. 420).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma
AU - Severens, R. J.
AU - van de Sanden, M. C.M.
AU - Verhoeven, H. J.M.
AU - Bastiaanssen, J.
AU - Schram, D. C.
PY - 1996/12/1
Y1 - 1996/12/1
N2 - Fast (7 nm/s) deposition of amorphous hydrogenated silicon with a midgap density of states less than 1016 cm-3 and an Urbach energy of 50 meV has been achieved using a remote argon/hydrogen plasma. The plasma is generated in a dc thermal arc (0.5 bar, 5 kW) and expands into a low pressure chamber (20 Pa) thus creating a plasma jet with a typical flow velocity of 103 m/s. Pure silane is injected into the jet immediately after the nozzle, in a typical flow mixture of Ar:H2:SiH4=55:10:10 scc/s. As the electron temperature in the recombining plasma is low (typ. 0.3 eV), silane radicals are thought to be produced mainly by hydrogen abstraction. Material quality in terms of refractive index, conductivity, microstructure parameter and optical bandgap was found to increase monotonously with substrate temperature, even up to 350 °C; for practically all low growth rate deposition schemes an optimum around 250°C is observed. It will be argued that this behavior is consistent with a simple kinetic model involving physisorption and hopping, growth on dangling bonds and thermal desorption of hydrogen.
AB - Fast (7 nm/s) deposition of amorphous hydrogenated silicon with a midgap density of states less than 1016 cm-3 and an Urbach energy of 50 meV has been achieved using a remote argon/hydrogen plasma. The plasma is generated in a dc thermal arc (0.5 bar, 5 kW) and expands into a low pressure chamber (20 Pa) thus creating a plasma jet with a typical flow velocity of 103 m/s. Pure silane is injected into the jet immediately after the nozzle, in a typical flow mixture of Ar:H2:SiH4=55:10:10 scc/s. As the electron temperature in the recombining plasma is low (typ. 0.3 eV), silane radicals are thought to be produced mainly by hydrogen abstraction. Material quality in terms of refractive index, conductivity, microstructure parameter and optical bandgap was found to increase monotonously with substrate temperature, even up to 350 °C; for practically all low growth rate deposition schemes an optimum around 250°C is observed. It will be argued that this behavior is consistent with a simple kinetic model involving physisorption and hopping, growth on dangling bonds and thermal desorption of hydrogen.
UR - http://www.scopus.com/inward/record.url?scp=0030383224&partnerID=8YFLogxK
U2 - 10.1557/PROC-420-341
DO - 10.1557/PROC-420-341
M3 - Conference contribution
SN - 1-55899-323-1
T3 - Materials Research Society Symposium - Proceedings
SP - 341
EP - 346
BT - Amorphous silicon technology 1996 : symposium, 1996, April 8-12, San Francisco, California, U.S.A.
A2 - Hack, M.
PB - Materials Research Society
CY - Pittsburgh, PA, USA
ER -