On the correlation between NBTI, SILC, and flicker noise

P. J. Wagner; B. Kaczer; A. Scholten; H. Reisinger; S. Bychikhin; D. Pogany; L.K.J. Vandamme; T. Grasser

doi:10.1109/IIRW.2012.6468921

On the correlation between NBTI, SILC, and flicker noise

P. J. Wagner, B. Kaczer, A. Scholten, H. Reisinger, S. Bychikhin, D. Pogany, L.K.J. Vandamme, T. Grasser

Electronic Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

Abstract

Negative Bias Temperature Instability (NBTI) is suspected to be linked to various other MOSFET phenomena. We report measurements of increased drain current noise, increased gate leakage current, and decreased recoverable threshold voltage shift after multiple cycles of negative bias temperature stress and relaxation for three different technologies. We also find that stress conditions have to be carefully selected, otherwise oxide breakdown will be erroneously interpreted as a correlation between NBTI, noise and gate leakage. Finally, the implications of our findings on the modelling of oxide defects are highlighted.

Original language	English
Title of host publication	2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012
Place of Publication	Piscataway
Pages	60-64
Number of pages	5
DOIs	https://doi.org/10.1109/IIRW.2012.6468921
Publication status	Published - 1 Dec 2012
Event	2012 IEEE International Integrated Reliability Workshop, IIRW 2012 - South Lake Tahoe, CA, United States Duration: 14 Oct 2012 → 18 Oct 2012

Conference

Conference	2012 IEEE International Integrated Reliability Workshop, IIRW 2012
Country/Territory	United States
City	South Lake Tahoe, CA
Period	14/10/12 → 18/10/12

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10.1109/IIRW.2012.6468921

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title = "On the correlation between NBTI, SILC, and flicker noise",

abstract = "Negative Bias Temperature Instability (NBTI) is suspected to be linked to various other MOSFET phenomena. We report measurements of increased drain current noise, increased gate leakage current, and decreased recoverable threshold voltage shift after multiple cycles of negative bias temperature stress and relaxation for three different technologies. We also find that stress conditions have to be carefully selected, otherwise oxide breakdown will be erroneously interpreted as a correlation between NBTI, noise and gate leakage. Finally, the implications of our findings on the modelling of oxide defects are highlighted.",

author = "Wagner, {P. J.} and B. Kaczer and A. Scholten and H. Reisinger and S. Bychikhin and D. Pogany and L.K.J. Vandamme and T. Grasser",

year = "2012",

month = dec,

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doi = "10.1109/IIRW.2012.6468921",

language = "English",

isbn = "978-1-4673-2749-7",

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note = "2012 IEEE International Integrated Reliability Workshop, IIRW 2012 ; Conference date: 14-10-2012 Through 18-10-2012",

}

Wagner, PJ, Kaczer, B, Scholten, A, Reisinger, H, Bychikhin, S, Pogany, D, Vandamme, LKJ & Grasser, T 2012, On the correlation between NBTI, SILC, and flicker noise. in 2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012., 6468921, Piscataway, pp. 60-64, 2012 IEEE International Integrated Reliability Workshop, IIRW 2012, South Lake Tahoe, CA, United States, 14/10/12. https://doi.org/10.1109/IIRW.2012.6468921

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T1 - On the correlation between NBTI, SILC, and flicker noise

AU - Wagner, P. J.

AU - Kaczer, B.

AU - Scholten, A.

AU - Reisinger, H.

AU - Bychikhin, S.

AU - Pogany, D.

AU - Vandamme, L.K.J.

AU - Grasser, T.

PY - 2012/12/1

Y1 - 2012/12/1

N2 - Negative Bias Temperature Instability (NBTI) is suspected to be linked to various other MOSFET phenomena. We report measurements of increased drain current noise, increased gate leakage current, and decreased recoverable threshold voltage shift after multiple cycles of negative bias temperature stress and relaxation for three different technologies. We also find that stress conditions have to be carefully selected, otherwise oxide breakdown will be erroneously interpreted as a correlation between NBTI, noise and gate leakage. Finally, the implications of our findings on the modelling of oxide defects are highlighted.

AB - Negative Bias Temperature Instability (NBTI) is suspected to be linked to various other MOSFET phenomena. We report measurements of increased drain current noise, increased gate leakage current, and decreased recoverable threshold voltage shift after multiple cycles of negative bias temperature stress and relaxation for three different technologies. We also find that stress conditions have to be carefully selected, otherwise oxide breakdown will be erroneously interpreted as a correlation between NBTI, noise and gate leakage. Finally, the implications of our findings on the modelling of oxide defects are highlighted.

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U2 - 10.1109/IIRW.2012.6468921

DO - 10.1109/IIRW.2012.6468921

M3 - Conference contribution

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SN - 978-1-4673-2749-7

SP - 60

EP - 64

BT - 2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012

CY - Piscataway

T2 - 2012 IEEE International Integrated Reliability Workshop, IIRW 2012

Y2 - 14 October 2012 through 18 October 2012

ER -

On the correlation between NBTI, SILC, and flicker noise

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