On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

B. Hoex, J.J.H. Gielis, M.C.M. Sanden, van de, W.M.M. Kessels

Research output: Contribution to journalArticleAcademicpeer-review

402 Citations (Scopus)
599 Downloads (Pure)

Abstract

Al2 O3 is a versatile high- ¿ dielectric that has excellent surface passivation properties on crystalline Si (c-Si), which are of vital importance for devices such as light emitting diodes and high-efficiency solar cells. We demonstrate both experimentally and by simulations that the surface passivation can be related to a satisfactory low interface defect density in combination with a strong field-effect passivation induced by a negative fixed charge density Qf of up to 1013 cm-2 present in the Al2 O3 film at the interface with the underlying Si substrate. The negative polarity of Qf in Al2 O3 is especially beneficial for the passivation of p -type c-Si as the bulk minority carriers are shielded from the c-Si surface. As the level of field-effect passivation is shown to scale with Qf2, the high Qf in Al2 O3 tolerates a higher interface defect density on c-Si compared to alternative surface passivation schemes.
Original languageEnglish
Article number113703
Pages (from-to)113703-1/7
Number of pages7
JournalJournal of Applied Physics
Volume104
Issue number11
DOIs
Publication statusPublished - 2008

Fingerprint Dive into the research topics of 'On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3'. Together they form a unique fingerprint.

  • Cite this