On the additivity of generation-recombination spectra part 3 : the McWhorter model for 1/f noise in MOSFETs

L.K.J. Vandamme, F.N. Hooge

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)

Abstract

This is a critical study on the McWhorter model, taking into account the conditions for additivity of GR spectra. A major finding is that the model does indeed give 1/f spectra. The calculated a-values agree with experimental values of MOSFETs in strong inversion. A simple comparison of experimental a-values with values calculated from a ¿µ-model or a McWhorter ¿n-model does not allow us to decide which the correct noise source is. However, the dependence of a on the gate voltage has often been used as a criterion for the correct source. Nevertheless, the VGT-dependence does not lead to unambiguous conclusions either.
Original languageEnglish
Pages (from-to)507-524
Number of pages18
JournalPhysica B: Condensed Matter
Volume357
Issue number3-4
DOIs
Publication statusPublished - 2004

Fingerprint

Dive into the research topics of 'On the additivity of generation-recombination spectra part 3 : the McWhorter model for 1/f noise in MOSFETs'. Together they form a unique fingerprint.

Cite this