TY - JOUR
T1 - On expanding recombining plasma for fast deposition of a-Si:H thin films
AU - Meeusen, G.J.
AU - Dahiya, R P
AU - Sanden, van de, M.C.M.
AU - Dinescu, G.
AU - Qing, Z.
AU - Meulenbroeks, R.F.G.
AU - Schram, D.C.
PY - 1994
Y1 - 1994
N2 - A high-density expanding recombining plasma is investigated for deposition of a-Si:H thin films. The deposition method allows high growth rates and it relies on separation of plasma production in a high-pressure thermal arc, and transport of fragments of injected SiH/sub 4/ monomer to the substrate. Some characteristics of the plasma are discussed together with an explanation of the dominant chemical kinetics, which proceed mainly through heavy-particle interactions. The deposition results indeed show very high growth rates from 2-30 nm s/sup -1/ on areas of 30 cm/sup 2/. The properties of the layers are characterized by measuring their refractive index (in the range 3.1-3.8) and bandgap 1.2-1.5 eV). Analysis of the oxygen content in the deposited films shows oxidation of the samples in air, which is probably associated with the microstructure of the layers
AB - A high-density expanding recombining plasma is investigated for deposition of a-Si:H thin films. The deposition method allows high growth rates and it relies on separation of plasma production in a high-pressure thermal arc, and transport of fragments of injected SiH/sub 4/ monomer to the substrate. Some characteristics of the plasma are discussed together with an explanation of the dominant chemical kinetics, which proceed mainly through heavy-particle interactions. The deposition results indeed show very high growth rates from 2-30 nm s/sup -1/ on areas of 30 cm/sup 2/. The properties of the layers are characterized by measuring their refractive index (in the range 3.1-3.8) and bandgap 1.2-1.5 eV). Analysis of the oxygen content in the deposited films shows oxidation of the samples in air, which is probably associated with the microstructure of the layers
U2 - 10.1088/0963-0252/3/4/009
DO - 10.1088/0963-0252/3/4/009
M3 - Article
SN - 0963-0252
VL - 3
SP - 521
EP - 527
JO - Plasma Sources Science and Technology
JF - Plasma Sources Science and Technology
IS - 4
ER -