On expanding recombining plasma for fast deposition of a-Si:H thin films

G.J. Meeusen, R P Dahiya, M.C.M. Sanden, van de, G. Dinescu, Z. Qing, R.F.G. Meulenbroeks, D.C. Schram

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Abstract

A high-density expanding recombining plasma is investigated for deposition of a-Si:H thin films. The deposition method allows high growth rates and it relies on separation of plasma production in a high-pressure thermal arc, and transport of fragments of injected SiH/sub 4/ monomer to the substrate. Some characteristics of the plasma are discussed together with an explanation of the dominant chemical kinetics, which proceed mainly through heavy-particle interactions. The deposition results indeed show very high growth rates from 2-30 nm s/sup -1/ on areas of 30 cm/sup 2/. The properties of the layers are characterized by measuring their refractive index (in the range 3.1-3.8) and bandgap 1.2-1.5 eV). Analysis of the oxygen content in the deposited films shows oxidation of the samples in air, which is probably associated with the microstructure of the layers
Original languageEnglish
Pages (from-to)521-527
JournalPlasma Sources Science and Technology
Volume3
Issue number4
DOIs
Publication statusPublished - 1994

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