Obtention d'alliages réfractaires SiCxNy(O) par dépôt chimique à oartir d'une gazeuse Si(CH3)4-NH3

M. Ducarroir, J. Lartigue, R. Morancho, G.F. Bastin

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Abstract

By pure thermal CVD from Si(CH/sub 3/)/sub 4/NH/sub 3/ mixtures SiC/sub x/N/sub y/(O) films have been prepared at 1475 K. Using electron microprobe analysis a continuous composition variation between SiC and Si/sub 3/N/sub 4/ is shown. The difficulty of quantitative analysis due to the conductivity of the samples is underlined. By selecting the right conditions, precise measurements were obtained. These films have an optical energy band gap in the range 2.2-4.1 eV and a constant photoluminescence peak. The film structure is discussed and these materials may be probably ascribed to an alloy phase
Original languageEnglish
Pages (from-to)541-544
Number of pages4
JournalComptes Rendus de l'Academie des Sciences. Série 2. Mecanique, physique, chimie, sciences de l'univers, sciences de la terre
Volume307
Issue number6
Publication statusPublished - 1988

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