Observation of narrow-band Si L-edge Cherenkov radiation generated by 5 MeV electrons

W. Knulst; O.J. Luiten; M.J. Wiel, van der; J. Verhoeven

doi:10.1063/1.1415049

Observation of narrow-band Si L-edge Cherenkov radiation generated by 5 MeV electrons

W. Knulst
, O.J. Luiten
, M.J. Wiel, van der
, J. Verhoeven

Coherence and Quantum Technology

Research output: Contribution to journal › Article › Academic › peer-review

50 Citations (Scopus)

274 Downloads (Pure)

Abstract

Narrow-band Cerenkov radiation at 99.7 eV has been generated by 5 MeV electrons in a silicon foil, with a yield similar to 1x10(-3) photon/electron. These measurements demonstrate the feasibility of a compact, narrow-band, and intense soft x-ray source based on small electron accelerators. The observed yield and dependence of the photon spectrum on emission angle are in agreement with theoretical predictions for Cerenkov radiation based on refractive index data of silicon. (C) 2001 American Institute of Physics.

Original language	English
Pages (from-to)	2999-3001
Journal	Applied Physics Letters
Volume	79
Issue number	18
DOIs	https://doi.org/10.1063/1.1415049
Publication status	Published - 2001

Access to Document

10.1063/1.1415049

Metis192904Final published version, 62.2 KB

Cite this

@article{74958967f7ef4e8f9010f71448d84c5d,

title = "Observation of narrow-band Si L-edge Cherenkov radiation generated by 5 MeV electrons",

abstract = "Narrow-band Cerenkov radiation at 99.7 eV has been generated by 5 MeV electrons in a silicon foil, with a yield similar to 1x10(-3) photon/electron. These measurements demonstrate the feasibility of a compact, narrow-band, and intense soft x-ray source based on small electron accelerators. The observed yield and dependence of the photon spectrum on emission angle are in agreement with theoretical predictions for Cerenkov radiation based on refractive index data of silicon. (C) 2001 American Institute of Physics.",

author = "W. Knulst and O.J. Luiten and \{Wiel, van der\}, M.J. and J. Verhoeven",

year = "2001",

doi = "10.1063/1.1415049",

language = "English",

volume = "79",

pages = "2999--3001",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - Observation of narrow-band Si L-edge Cherenkov radiation generated by 5 MeV electrons

AU - Knulst, W.

AU - Luiten, O.J.

AU - Wiel, van der, M.J.

AU - Verhoeven, J.

PY - 2001

Y1 - 2001

N2 - Narrow-band Cerenkov radiation at 99.7 eV has been generated by 5 MeV electrons in a silicon foil, with a yield similar to 1x10(-3) photon/electron. These measurements demonstrate the feasibility of a compact, narrow-band, and intense soft x-ray source based on small electron accelerators. The observed yield and dependence of the photon spectrum on emission angle are in agreement with theoretical predictions for Cerenkov radiation based on refractive index data of silicon. (C) 2001 American Institute of Physics.

AB - Narrow-band Cerenkov radiation at 99.7 eV has been generated by 5 MeV electrons in a silicon foil, with a yield similar to 1x10(-3) photon/electron. These measurements demonstrate the feasibility of a compact, narrow-band, and intense soft x-ray source based on small electron accelerators. The observed yield and dependence of the photon spectrum on emission angle are in agreement with theoretical predictions for Cerenkov radiation based on refractive index data of silicon. (C) 2001 American Institute of Physics.

U2 - 10.1063/1.1415049

DO - 10.1063/1.1415049

M3 - Article

SN - 0003-6951

VL - 79

SP - 2999

EP - 3001

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Observation of narrow-band Si L-edge Cherenkov radiation generated by 5 MeV electrons

Abstract

Access to Document

Fingerprint

Cite this