Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C

P.M. Koenraad, F.A.P. Blom, C.J.G.M. Langerak, M.R. Leijs, J.A.A.J. Perenboom, J. Singleton, S.J.R.M. Spermon, W.C. Vleuten, van der, A.P.J. Voncken, J.H. Wolter

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