Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C

P.M. Koenraad; F.A.P. Blom; C.J.G.M. Langerak; M.R. Leijs; J.A.A.J. Perenboom; J. Singleton; S.J.R.M. Spermon; W.C. Vleuten, van der; A.P.J. Voncken; J.H. Wolter

doi:10.1088/0268-1242/5/8/010

Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C

P.M. Koenraad, F.A.P. Blom, C.J.G.M. Langerak, M.R. Leijs, J.A.A.J. Perenboom, J. Singleton, S.J.R.M. Spermon, W.C. Vleuten, van der, A.P.J. Voncken, J.H. Wolter

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The authors report on temperature-dependent Hall effect measurements on Si delta-doped GaAs samples grown by MBE at 480 °C, 530 °C and 620 °C. In the best sample grown at 480 °C the mobility is 6760 cm2 V-1 s-1 at 4.2 K. To the authors' knowledge this is the highest mobility ever reported in a delta-doped structure. From subband population measurements the spreading of the donors in the samples grown at low temperature is determined to be 20 Å. On these high-mobility samples they were able to perform the first reported cyclotron resonance measurements. The electron effective mass is found to be considerably higher than that at the Gamma-conduction band minimum in GaAs.

Original language	English
Pages (from-to)	861-866
Journal	Semiconductor Science and Technology
Volume	5
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/5/8/010
Publication status	Published - 1990

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Koenraad, P. M., Blom, F. A. P., Langerak, C. J. G. M., Leijs, M. R., Perenboom, J. A. A. J., Singleton, J., Spermon, S. J. R. M., Vleuten, van der, W. C., Voncken, A. P. J., & Wolter, J. H. (1990). Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C. Semiconductor Science and Technology, 5(8), 861-866. https://doi.org/10.1088/0268-1242/5/8/010

@article{fefbd5ccf1ed4751ac78cad297fb007a,

title = "Observation of high mobility and cyclotron resonance in 20 {\AA} silicon delta-doped GaAs grown by MBE at 480 °C",

abstract = "The authors report on temperature-dependent Hall effect measurements on Si delta-doped GaAs samples grown by MBE at 480 °C, 530 °C and 620 °C. In the best sample grown at 480 °C the mobility is 6760 cm2 V-1 s-1 at 4.2 K. To the authors' knowledge this is the highest mobility ever reported in a delta-doped structure. From subband population measurements the spreading of the donors in the samples grown at low temperature is determined to be 20 {\AA}. On these high-mobility samples they were able to perform the first reported cyclotron resonance measurements. The electron effective mass is found to be considerably higher than that at the Gamma-conduction band minimum in GaAs.",

author = "P.M. Koenraad and F.A.P. Blom and C.J.G.M. Langerak and M.R. Leijs and J.A.A.J. Perenboom and J. Singleton and S.J.R.M. Spermon and {Vleuten, van der}, W.C. and A.P.J. Voncken and J.H. Wolter",

year = "1990",

doi = "10.1088/0268-1242/5/8/010",

language = "English",

volume = "5",

pages = "861--866",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "8",

}

Koenraad, PM, Blom, FAP, Langerak, CJGM, Leijs, MR, Perenboom, JAAJ, Singleton, J, Spermon, SJRM, Vleuten, van der, WC, Voncken, APJ & Wolter, JH 1990, 'Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C', Semiconductor Science and Technology, vol. 5, no. 8, pp. 861-866. https://doi.org/10.1088/0268-1242/5/8/010

TY - JOUR

T1 - Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C

AU - Koenraad, P.M.

AU - Blom, F.A.P.

AU - Langerak, C.J.G.M.

AU - Leijs, M.R.

AU - Perenboom, J.A.A.J.

AU - Singleton, J.

AU - Spermon, S.J.R.M.

AU - Vleuten, van der, W.C.

AU - Voncken, A.P.J.

AU - Wolter, J.H.

PY - 1990

Y1 - 1990

N2 - The authors report on temperature-dependent Hall effect measurements on Si delta-doped GaAs samples grown by MBE at 480 °C, 530 °C and 620 °C. In the best sample grown at 480 °C the mobility is 6760 cm2 V-1 s-1 at 4.2 K. To the authors' knowledge this is the highest mobility ever reported in a delta-doped structure. From subband population measurements the spreading of the donors in the samples grown at low temperature is determined to be 20 Å. On these high-mobility samples they were able to perform the first reported cyclotron resonance measurements. The electron effective mass is found to be considerably higher than that at the Gamma-conduction band minimum in GaAs.

AB - The authors report on temperature-dependent Hall effect measurements on Si delta-doped GaAs samples grown by MBE at 480 °C, 530 °C and 620 °C. In the best sample grown at 480 °C the mobility is 6760 cm2 V-1 s-1 at 4.2 K. To the authors' knowledge this is the highest mobility ever reported in a delta-doped structure. From subband population measurements the spreading of the donors in the samples grown at low temperature is determined to be 20 Å. On these high-mobility samples they were able to perform the first reported cyclotron resonance measurements. The electron effective mass is found to be considerably higher than that at the Gamma-conduction band minimum in GaAs.

U2 - 10.1088/0268-1242/5/8/010

DO - 10.1088/0268-1242/5/8/010

M3 - Article

SN - 0268-1242

VL - 5

SP - 861

EP - 866

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

ER -

Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C

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