Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C

P.M. Koenraad, F.A.P. Blom, C.J.G.M. Langerak, M.R. Leijs, J.A.A.J. Perenboom, J. Singleton, S.J.R.M. Spermon, W.C. Vleuten, van der, A.P.J. Voncken, J.H. Wolter

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Abstract

The authors report on temperature-dependent Hall effect measurements on Si delta-doped GaAs samples grown by MBE at 480 °C, 530 °C and 620 °C. In the best sample grown at 480 °C the mobility is 6760 cm2 V-1 s-1 at 4.2 K. To the authors' knowledge this is the highest mobility ever reported in a delta-doped structure. From subband population measurements the spreading of the donors in the samples grown at low temperature is determined to be 20 Å. On these high-mobility samples they were able to perform the first reported cyclotron resonance measurements. The electron effective mass is found to be considerably higher than that at the Gamma-conduction band minimum in GaAs.
Original languageEnglish
Pages (from-to)861-866
JournalSemiconductor Science and Technology
Volume5
Issue number8
DOIs
Publication statusPublished - 1990

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