Observation of dynamics in a 5 Ghz passively mode-locked InAs/InP (100) quantum dot ring laser at 1.5 µm

M.J.R. Heck; M.S. Tahvili; S. Anantathanasarn; M.K. Smit; R. Nötzel; E.A.J.M. Bente

doi:10.1109/CLEOE-EQEC.2009.5191529

Observation of dynamics in a 5 Ghz passively mode-locked InAs/InP (100) quantum dot ring laser at 1.5 µm

M.J.R. Heck, M.S. Tahvili, S. Anantathanasarn, M.K. Smit, R. Nötzel, E.A.J.M. Bente

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

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Abstract

In this paper we present the first observation of passive mode-locking in a quantum dot (QD) ring laser operating at wavelengths around 1.5 mum. The InAs/InP QD laser structure is grown on n-type (100) InP substrates by metal-organic vapor-phase epitaxy.

Original language	English
Title of host publication	The European Conference on Lasers and Electro-Optics, CLEO_Europe 2009
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	1-1
ISBN (Print)	978-1-4244-4079-5
DOIs	https://doi.org/10.1109/CLEOE-EQEC.2009.5191529
Publication status	Published - 2009
Event	2009 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2009 - ICM Center of the New Munich Trade Fair Centre, Munich, Germany Duration: 14 Jun 2009 → 19 Jun 2009 http://2009.cleoeurope.org/

Conference

Conference	2009 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2009
Abbreviated title	CLEO/Europe-EQEC 2009
Country/Territory	Germany
City	Munich
Period	14/06/09 → 19/06/09
Other	CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference
Internet address	http://2009.cleoeurope.org/

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Heck, M. J. R., Tahvili, M. S., Anantathanasarn, S., Smit, M. K., Nötzel, R., & Bente, E. A. J. M. (2009). Observation of dynamics in a 5 Ghz passively mode-locked InAs/InP (100) quantum dot ring laser at 1.5 µm. In The European Conference on Lasers and Electro-Optics, CLEO_Europe 2009 (pp. 1-1). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/CLEOE-EQEC.2009.5191529

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abstract = "In this paper we present the first observation of passive mode-locking in a quantum dot (QD) ring laser operating at wavelengths around 1.5 mum. The InAs/InP QD laser structure is grown on n-type (100) InP substrates by metal-organic vapor-phase epitaxy.",

author = "M.J.R. Heck and M.S. Tahvili and S. Anantathanasarn and M.K. Smit and R. N{\"o}tzel and E.A.J.M. Bente",

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language = "English",

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booktitle = "The European Conference on Lasers and Electro-Optics, CLEO_Europe 2009",

publisher = "Institute of Electrical and Electronics Engineers",

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note = "2009 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2009, CLEO/Europe-EQEC 2009 ; Conference date: 14-06-2009 Through 19-06-2009",

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Heck, MJR, Tahvili, MS, Anantathanasarn, S, Smit, MK, Nötzel, R & Bente, EAJM 2009, Observation of dynamics in a 5 Ghz passively mode-locked InAs/InP (100) quantum dot ring laser at 1.5 µm. in The European Conference on Lasers and Electro-Optics, CLEO_Europe 2009. Institute of Electrical and Electronics Engineers, Piscataway, pp. 1-1, 2009 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2009, Munich, Germany, 14/06/09. https://doi.org/10.1109/CLEOE-EQEC.2009.5191529

Observation of dynamics in a 5 Ghz passively mode-locked InAs/InP (100) quantum dot ring laser at 1.5 µm. / Heck, M.J.R.; Tahvili, M.S.; Anantathanasarn, S. et al.

The European Conference on Lasers and Electro-Optics, CLEO_Europe 2009. Piscataway : Institute of Electrical and Electronics Engineers, 2009. p. 1-1.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AB - In this paper we present the first observation of passive mode-locking in a quantum dot (QD) ring laser operating at wavelengths around 1.5 mum. The InAs/InP QD laser structure is grown on n-type (100) InP substrates by metal-organic vapor-phase epitaxy.

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BT - The European Conference on Lasers and Electro-Optics, CLEO_Europe 2009

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Observation of dynamics in a 5 Ghz passively mode-locked InAs/InP (100) quantum dot ring laser at 1.5 µm

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