Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots

G. Janssen, E. Goovaerts, A. Bouwen, B. Partoens, B. Daele, van, N. Zurauskiene, P.M. Koenraad, J.H. Wolter

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Abstract

A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by means of optically detected microwave resonance spectroscopy. The absorption of W-band (95 GHz) microwaves is observed via the detection of changes in the total photoluminescence intensity of the InAs QDs. A strong and anisotropic signal at low fields is ascribed to cyclotron resonance of the electron in the two-dimensional wetting layer, corresponding to an effective mass of 0.053m/sub 0/. Further microwave-induced signals at higher fields are tentatively attributed to magnetic resonance transitions between spin states of the holes confined in the shallow dots
Original languageEnglish
Article number45329
Pages (from-to)45329-1/6
JournalPhysical Review B
Volume68
Issue number4
DOIs
Publication statusPublished - 2003

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