Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots

G. Janssen; E. Goovaerts; A. Bouwen; B. Partoens; B. Daele, van; N. Zurauskiene; P.M. Koenraad; J.H. Wolter

doi:10.1103/PhysRevB.68.045329

Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots

G. Janssen, E. Goovaerts, A. Bouwen, B. Partoens, B. Daele, van, N. Zurauskiene, P.M. Koenraad, J.H. Wolter

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Abstract

A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by means of optically detected microwave resonance spectroscopy. The absorption of W-band (95 GHz) microwaves is observed via the detection of changes in the total photoluminescence intensity of the InAs QDs. A strong and anisotropic signal at low fields is ascribed to cyclotron resonance of the electron in the two-dimensional wetting layer, corresponding to an effective mass of 0.053m/sub 0/. Further microwave-induced signals at higher fields are tentatively attributed to magnetic resonance transitions between spin states of the holes confined in the shallow dots

Original language	English
Article number	45329
Pages (from-to)	45329-1/6
Journal	Physical Review B
Volume	68
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.68.045329
Publication status	Published - 2003

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title = "Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots",

abstract = "A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by means of optically detected microwave resonance spectroscopy. The absorption of W-band (95 GHz) microwaves is observed via the detection of changes in the total photoluminescence intensity of the InAs QDs. A strong and anisotropic signal at low fields is ascribed to cyclotron resonance of the electron in the two-dimensional wetting layer, corresponding to an effective mass of 0.053m/sub 0/. Further microwave-induced signals at higher fields are tentatively attributed to magnetic resonance transitions between spin states of the holes confined in the shallow dots",

author = "G. Janssen and E. Goovaerts and A. Bouwen and B. Partoens and {Daele, van}, B. and N. Zurauskiene and P.M. Koenraad and J.H. Wolter",

year = "2003",

doi = "10.1103/PhysRevB.68.045329",

language = "English",

volume = "68",

pages = "45329--1/6",

journal = "Physical Review B",

issn = "1098-0121",

publisher = "American Physical Society",

number = "4",

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T1 - Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots

AU - Janssen, G.

AU - Goovaerts, E.

AU - Bouwen, A.

AU - Partoens, B.

AU - Daele, van, B.

AU - Zurauskiene, N.

AU - Koenraad, P.M.

AU - Wolter, J.H.

PY - 2003

Y1 - 2003

N2 - A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by means of optically detected microwave resonance spectroscopy. The absorption of W-band (95 GHz) microwaves is observed via the detection of changes in the total photoluminescence intensity of the InAs QDs. A strong and anisotropic signal at low fields is ascribed to cyclotron resonance of the electron in the two-dimensional wetting layer, corresponding to an effective mass of 0.053m/sub 0/. Further microwave-induced signals at higher fields are tentatively attributed to magnetic resonance transitions between spin states of the holes confined in the shallow dots

AB - A thin InAs/GaAs wetting layer with shallowly formed InAs quantum dots (QDs) is investigated by means of optically detected microwave resonance spectroscopy. The absorption of W-band (95 GHz) microwaves is observed via the detection of changes in the total photoluminescence intensity of the InAs QDs. A strong and anisotropic signal at low fields is ascribed to cyclotron resonance of the electron in the two-dimensional wetting layer, corresponding to an effective mass of 0.053m/sub 0/. Further microwave-induced signals at higher fields are tentatively attributed to magnetic resonance transitions between spin states of the holes confined in the shallow dots

U2 - 10.1103/PhysRevB.68.045329

DO - 10.1103/PhysRevB.68.045329

M3 - Article

SN - 1098-0121

VL - 68

SP - 45329-1/6

JO - Physical Review B

JF - Physical Review B

IS - 4

M1 - 45329

ER -

Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots

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