Observation of anomalous electrical transport properties in MoSi 2 films

P. H. Woerlee; P. M.Th M. Van Attekum; A. A.M. Hoeben; G. A.M. Hurkx; R. A.M. Wolters

doi:10.1063/1.94964

Observation of anomalous electrical transport properties in MoSi ₂ films

P. H. Woerlee, P. M.Th M. Van Attekum, A. A.M. Hoeben, G. A.M. Hurkx, R. A.M. Wolters

Applied Physics and Science Education

Research output: Contribution to journal › Article › Academic › peer-review

23 Citations (Scopus)

Abstract

We measured the temperature dependence of the electrical resistivity and of the Hall constant for MoSi₂ films between 3.5 and 350 K. A behavior quite unusual for a metal was observed. The most striking effect is the proportionality of the resistivity with T ² for temperatures between 70 and 220 K. Further, we find the Hall constant, which is positive at room temperature, to change sign around 170 K. The bulk resistivity of the MoSi ₂ at 295 K is deduced to be approximately 18 μΩ cm. We suggest that the observed anomalies and the high resistivity are due to strong s-d scattering.

Original language	English
Pages (from-to)	876-878
Number of pages	3
Journal	Applied Physics Letters
Volume	44
Issue number	9
DOIs	https://doi.org/10.1063/1.94964
Publication status	Published - 1 Dec 1984

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abstract = "We measured the temperature dependence of the electrical resistivity and of the Hall constant for MoSi2 films between 3.5 and 350 K. A behavior quite unusual for a metal was observed. The most striking effect is the proportionality of the resistivity with T 2 for temperatures between 70 and 220 K. Further, we find the Hall constant, which is positive at room temperature, to change sign around 170 K. The bulk resistivity of the MoSi 2 at 295 K is deduced to be approximately 18 μΩ cm. We suggest that the observed anomalies and the high resistivity are due to strong s-d scattering.",

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AU - Woerlee, P. H.

AU - Van Attekum, P. M.Th M.

AU - Hoeben, A. A.M.

AU - Hurkx, G. A.M.

AU - Wolters, R. A.M.

PY - 1984/12/1

Y1 - 1984/12/1

N2 - We measured the temperature dependence of the electrical resistivity and of the Hall constant for MoSi2 films between 3.5 and 350 K. A behavior quite unusual for a metal was observed. The most striking effect is the proportionality of the resistivity with T 2 for temperatures between 70 and 220 K. Further, we find the Hall constant, which is positive at room temperature, to change sign around 170 K. The bulk resistivity of the MoSi 2 at 295 K is deduced to be approximately 18 μΩ cm. We suggest that the observed anomalies and the high resistivity are due to strong s-d scattering.

AB - We measured the temperature dependence of the electrical resistivity and of the Hall constant for MoSi2 films between 3.5 and 350 K. A behavior quite unusual for a metal was observed. The most striking effect is the proportionality of the resistivity with T 2 for temperatures between 70 and 220 K. Further, we find the Hall constant, which is positive at room temperature, to change sign around 170 K. The bulk resistivity of the MoSi 2 at 295 K is deduced to be approximately 18 μΩ cm. We suggest that the observed anomalies and the high resistivity are due to strong s-d scattering.

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Observation of anomalous electrical transport properties in MoSi ₂ films

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