Abstract
Measured gain spectra from InAs/InP (100) quantum-dot amplifiers have been analyzed with a quantum-dot rate-equation model. The amplifiers are fabricated to have a peak gain wavelength around 1700nm. Our comparison between measured and simulated gain spectra shows that two effects in the quantum-dot material introduce the 65 nm blue shift and change in shape that have been observed in the measured gain spectrum with an increase in injection current density from 1000A/cm2 to 3000A/cm2. The first effect is the shift from GS to ES, and the second effect the dot size dependent filling due to the dot size dependent escape rates.
Original language | English |
---|---|
Title of host publication | Proceedings 14th Annual Symposium of the IEEE Photonics Benelux Chapter, 5-6 November 2009, Brussels, Belgium |
Editors | St. Beri, Ph. Tassin, G. Craggs, X. Leijtens, J. Danckaert |
Place of Publication | Brussels |
Publisher | Brussels University Press |
Pages | 169-172 |
ISBN (Print) | 978-90-5487-650-2 |
Publication status | Published - 2009 |
Event | 14th Annual Symposium of the IEEE Photonics Benelux Chapter - Brussels, Belgium Duration: 5 Nov 2009 → 6 Nov 2009 Conference number: 14 |
Conference
Conference | 14th Annual Symposium of the IEEE Photonics Benelux Chapter |
---|---|
Country/Territory | Belgium |
City | Brussels |
Period | 5/11/09 → 6/11/09 |