Observation and modeling of long-wavelength InAs/InP (100) quantum dot amplifier small signal gain spectra

B.W. Tilma, M.S. Tahvili, J. Kotani, R. Nötzel, M.K. Smit, E.A.J.M. Bente

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Abstract

Measured gain spectra from InAs/InP (100) quantum-dot amplifiers have been analyzed with a quantum-dot rate-equation model. The amplifiers are fabricated to have a peak gain wavelength around 1700nm. Our comparison between measured and simulated gain spectra shows that two effects in the quantum-dot material introduce the 65 nm blue shift and change in shape that have been observed in the measured gain spectrum with an increase in injection current density from 1000A/cm2 to 3000A/cm2. The first effect is the shift from GS to ES, and the second effect the dot size dependent filling due to the dot size dependent escape rates.
Original languageEnglish
Title of host publicationProceedings 14th Annual Symposium of the IEEE Photonics Benelux Chapter, 5-6 November 2009, Brussels, Belgium
EditorsSt. Beri, Ph. Tassin, G. Craggs, X. Leijtens, J. Danckaert
Place of PublicationBrussels
PublisherBrussels University Press
Pages169-172
ISBN (Print)978-90-5487-650-2
Publication statusPublished - 2009
Event14th Annual Symposium of the IEEE Photonics Benelux Chapter, November 5-6, 2009, Brussels, Belgium - Brussels, Belgium
Duration: 5 Nov 20096 Nov 2009

Conference

Conference14th Annual Symposium of the IEEE Photonics Benelux Chapter, November 5-6, 2009, Brussels, Belgium
CountryBelgium
CityBrussels
Period5/11/096/11/09

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