The replication of the interface roughness in SiGe/Si multilayers grown on miscut Si(001) substrates has been studied by means of x-ray reflectivity reciprocal space mapping. The interface profiles were found to be highly correlated and the direction of the maximal replication was inclined with respect to the growth direction. This oblique replication is explained by the influence of the inhomogeneous strain distribution around step bunches. The formation of step bunches is described by a kinetic step-flow model based on the work by Tersoff et al. [Phys. Rev. Lett. 75, 2730 (1995)]. We have generalized this model by taking into account local variations of the in-plane strain. The angle of obliqueness deduced from these calculations agrees very well with the experimental findings.
Holy, V., Darhuber, A. A., Stangl, J., Bauer, G., Nützel, J-F., & Abstreiter, G. (1998). Oblique roughness replication in strained SiGe/Si multilayers. Physical Review B, 57(19), 12435-12442. https://doi.org/10.1103/PhysRevB.57.12435