Nucleation phenomena during titanium silicon reaction

I.J.M.M. Raaijmakers, L.J. IJzendoorn, van, A.M.L. Theunissen, Ki-Bum Kim

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    It is known that thermal annealing of Ti and amorphous (alpha) Si first results in an amorphous silicide, after which the crystalline disilicide grows under diffusion control. The situation with respect to the reaction of Ti with crystalline (x) Si is much less clear. We have investigated the reaction of Ti with xSi with (high resolution) cross-section transmission electron microscopy and in-situ Rutherford backscattering spectroscopy. It is shown that an amorphous silicide can also be formed on crystalline Si. The presence of this amorphous silicide as a precursor to the C49TiSi2 phase is suggested to be an important issue in the nucleation and growth of the disilicide.
    Original languageEnglish
    Title of host publicationRapid thermal annealing/ chemical vapor deposition and integrated processing : symposium, held April 25-28, San Diego, California, USA
    EditorsD. Hodul, J.C. Gelpey, M.L. Green
    Place of PublicationPittsburgh
    PublisherMaterials Research Society
    Pages267-272
    ISBN (Print)1-55899-019-4
    Publication statusPublished - 1989

    Publication series

    NameMaterials Research Society Symposium Proceedings
    Volume146
    ISSN (Print)0272-9172

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