Nucleation and growth in TiN CVD on graphite substrates

H.B. Bree, de; M.H. Haafkens; M.M. Michorius; L.R. Wolff

doi:10.1051/jp4:1991227

Nucleation and growth in TiN CVD on graphite substrates

H.B. Bree, de, M.H. Haafkens, M.M. Michorius, L.R. Wolff

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Abstract

Morphology and preferential crystallographic orientation were studied in TiN CVD on graphite substrates. Three types of isostatically pressed graphite were used, both in as delivered and in purified condition. Using X-ray diffractometry and optical as well as scanning electron microscopy, the results were analyzed after various deposition times. Three deposition temperatures : 850, 900 and 950°C were used. Except for the deposition temperature, the process conditions were not varied. In an experiment where instead of TiCl4, H2 and N2 only TiCl4 and H2 were used as reactants, it was demonstrated that the deposition of TiN on graphite substrates is probably preceded by the formation of a monolayer of TiC.

Original language	English
Pages (from-to)	217-224
Number of pages	8
Journal	Journal de Physique IV, Colloque
Volume	1
Issue number	C2
DOIs	https://doi.org/10.1051/jp4:1991227 https://doi.org/10.1051/jp4;1991227
Publication status	Published - 1991

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title = "Nucleation and growth in TiN CVD on graphite substrates",

abstract = "Morphology and preferential crystallographic orientation were studied in TiN CVD on graphite substrates. Three types of isostatically pressed graphite were used, both in as delivered and in purified condition. Using X-ray diffractometry and optical as well as scanning electron microscopy, the results were analyzed after various deposition times. Three deposition temperatures : 850, 900 and 950°C were used. Except for the deposition temperature, the process conditions were not varied. In an experiment where instead of TiCl4, H2 and N2 only TiCl4 and H2 were used as reactants, it was demonstrated that the deposition of TiN on graphite substrates is probably preceded by the formation of a monolayer of TiC.",

author = "{Bree, de}, H.B. and M.H. Haafkens and M.M. Michorius and L.R. Wolff",

year = "1991",

doi = "10.1051/jp4:1991227",

language = "English",

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journal = "Journal de Physique IV, Colloque",

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TY - JOUR

T1 - Nucleation and growth in TiN CVD on graphite substrates

AU - Bree, de, H.B.

AU - Haafkens, M.H.

AU - Michorius, M.M.

AU - Wolff, L.R.

PY - 1991

Y1 - 1991

N2 - Morphology and preferential crystallographic orientation were studied in TiN CVD on graphite substrates. Three types of isostatically pressed graphite were used, both in as delivered and in purified condition. Using X-ray diffractometry and optical as well as scanning electron microscopy, the results were analyzed after various deposition times. Three deposition temperatures : 850, 900 and 950°C were used. Except for the deposition temperature, the process conditions were not varied. In an experiment where instead of TiCl4, H2 and N2 only TiCl4 and H2 were used as reactants, it was demonstrated that the deposition of TiN on graphite substrates is probably preceded by the formation of a monolayer of TiC.

AB - Morphology and preferential crystallographic orientation were studied in TiN CVD on graphite substrates. Three types of isostatically pressed graphite were used, both in as delivered and in purified condition. Using X-ray diffractometry and optical as well as scanning electron microscopy, the results were analyzed after various deposition times. Three deposition temperatures : 850, 900 and 950°C were used. Except for the deposition temperature, the process conditions were not varied. In an experiment where instead of TiCl4, H2 and N2 only TiCl4 and H2 were used as reactants, it was demonstrated that the deposition of TiN on graphite substrates is probably preceded by the formation of a monolayer of TiC.

U2 - 10.1051/jp4:1991227

DO - 10.1051/jp4:1991227

M3 - Article

VL - 1

SP - 217

EP - 224

JO - Journal de Physique IV, Colloque

JF - Journal de Physique IV, Colloque

SN - 1155-4339

IS - C2

ER -