Nozzle for high-speed jetting devices

G. Nisato; F. Roozeboom; J.E.J.M. Rubingh; W. Dekkers

Nozzle for high-speed jetting devices

G. Nisato (Inventor), F. Roozeboom (Inventor), J.E.J.M. Rubingh (Inventor), W. Dekkers (Inventor)

Plasma & Materials Processing

Research output: Patent › Patent publication

Abstract

A nozzle for jetting devices is described comprising e.g. one patterned silicon substrate enabling semiconductor mass prodn. The method of manufg. the nozzle is characterized by using one mask layer deposited on the silicon substrate. The etching of the silicon substrate is done by means of a first isotropic etching step and a second anisotropic etching step through the mask layer, resulting in a perfectly aligned nozzle. [on SciFinder (R)]

Original language	English
Patent number	WO2008050287
Publication status	Published - 2 May 2008

Cite this

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title = "Nozzle for high-speed jetting devices",

abstract = "A nozzle for jetting devices is described comprising e.g. one patterned silicon substrate enabling semiconductor mass prodn. The method of manufg. the nozzle is characterized by using one mask layer deposited on the silicon substrate. The etching of the silicon substrate is done by means of a first isotropic etching step and a second anisotropic etching step through the mask layer, resulting in a perfectly aligned nozzle. [on SciFinder (R)]",

author = "G. Nisato and F. Roozeboom and J.E.J.M. Rubingh and W. Dekkers",

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T1 - Nozzle for high-speed jetting devices

AU - Nisato, G.

AU - Roozeboom, F.

AU - Rubingh, J.E.J.M.

AU - Dekkers, W.

PY - 2008/5/2

Y1 - 2008/5/2

N2 - A nozzle for jetting devices is described comprising e.g. one patterned silicon substrate enabling semiconductor mass prodn. The method of manufg. the nozzle is characterized by using one mask layer deposited on the silicon substrate. The etching of the silicon substrate is done by means of a first isotropic etching step and a second anisotropic etching step through the mask layer, resulting in a perfectly aligned nozzle. [on SciFinder (R)]

AB - A nozzle for jetting devices is described comprising e.g. one patterned silicon substrate enabling semiconductor mass prodn. The method of manufg. the nozzle is characterized by using one mask layer deposited on the silicon substrate. The etching of the silicon substrate is done by means of a first isotropic etching step and a second anisotropic etching step through the mask layer, resulting in a perfectly aligned nozzle. [on SciFinder (R)]

UR - http://v3.espacenet.com/publicationDetails/biblio?CC=WO&NR=2008050287A1&KC=A1&FT=D&date=20080502&DB=EPODOC&locale=en_EP

M3 - Patent publication

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ER -

Nozzle for high-speed jetting devices

Abstract

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