Novel on-wafer technique for loss characterization

E. Bitincka, M.K. Smit

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Abstract

We report for the first time an on-wafer propagation loss characterization technique that simplifies and speeds up the validation process. The small footprint (1.5 mm2) and high accuracy (±0.23 dB/cm) make this method ideal for PIC mass production.
Original languageEnglish
Title of host publicationProceedings of the Integrated Photonics Research, Silicon and Nanophotonics. July 13-17, 2014, San Diego, California United States
PublisherOptical Society of America (OSA)
PagesIM3A.4.-
ISBN (Print)978-1-55752-737-0
DOIs
Publication statusPublished - 2014
EventIntegrated Photonics Research, Silicon and Nanophotonics 2014 (IPR '14), July 13-17, 2014, San Diego, CA, USA - San Diego, CA, United States
Duration: 13 Jul 201417 Jul 2014

Conference

ConferenceIntegrated Photonics Research, Silicon and Nanophotonics 2014 (IPR '14), July 13-17, 2014, San Diego, CA, USA
Abbreviated titleIPR '14
CountryUnited States
CitySan Diego, CA
Period13/07/1417/07/14

Cite this

Bitincka, E., & Smit, M. K. (2014). Novel on-wafer technique for loss characterization. In Proceedings of the Integrated Photonics Research, Silicon and Nanophotonics. July 13-17, 2014, San Diego, California United States (pp. IM3A.4.-). Optical Society of America (OSA). https://doi.org/10.1364/IPRSN.2014.IM3A.4