Novel method of producing ultrasmall platinum silicide gate electrodes

P. H. Woerlee, G. A.M. Hurkx, W. J.M.J. Josquin, J. F.C.M. Verhoeven

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)


A novel method has been developed for producing platinum silicide gate electrodes with submicron width. A lateral chemical reaction of platinum with polycrystalline silicon at a step edge was used. The width of the wire is determined by the thickness of a sputtered metal layer. Wires with width between 35 and 300 nm have been produced. The method has been used for making long-channel field-effect transistors with good device properties. Some preliminary results of the study of the low-temperature electrical transport properties of inversion layers with width of 0.12 μm are reported.

Original languageEnglish
Pages (from-to)700-702
Number of pages3
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 1 Dec 1985


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