Abstract
A novel method has been developed for producing platinum silicide gate electrodes with submicron width. A lateral chemical reaction of platinum with polycrystalline silicon at a step edge was used. The width of the wire is determined by the thickness of a sputtered metal layer. Wires with width between 35 and 300 nm have been produced. The method has been used for making long-channel field-effect transistors with good device properties. Some preliminary results of the study of the low-temperature electrical transport properties of inversion layers with width of 0.12 μm are reported.
Original language | English |
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Pages (from-to) | 700-702 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 47 |
Issue number | 7 |
DOIs | |
Publication status | Published - 1 Dec 1985 |