Novel heteroleptic precursors for atomic layer deposition of TiO2

T. Blanquart, L. Niinistö, M. Gavagnin, V. Longo, V.R. Pallem, C. Dussarrat, M. Ritala, M. Leskelä

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Two novel heteroleptic titanium precursors for the atomic layer deposition (ALD) of TiO2 were investigated, namely, titanium (N,N'-diisopropylacetamidinate)tris(isopropoxide) (Ti(OiPr)3(NiPr-Me-amd)) and titanium bis(dimethylamide)bis(isopropoxide) (Ti(NMe2)2(OiPr)2). Water was used as the oxygen source. These two precursors are liquid at room temperature and present good volatility, thermal stability and reactivity. The self-limiting ALD-growth mode was confirmed at 325 °C for both precursors. The titanium (N,N'-diisopropylacetamidinate)tri(isopropoxide)/water process showed an ALD window at 300–350 °C, and titanium bis(dimethylamide)bis(isopropoxide) exhibited an interestingly high growth rate of 0.75 Å/cycle at 325 °C. The films were crystallized to the anatase phase in the as-deposited state. X-ray photoelectron spectroscopy analysis demonstrated that the films were pure and close to the stoichiometric composition. The refractive indexes and absorption coefficient of the films were measured by spectroscopic ellipsometry.
Original languageEnglish
Pages (from-to)3420-3424
JournalChemistry of Materials
Issue number17
Publication statusPublished - 2012


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