Novel damage model for delamination in Cu/low-k IC backend structures

M. A.J. Van Gils, O. Van Der Sluis, G. Q. Zhang, J. H.J. Janssen, R. M.J. Voncken

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

For the development of state-of-the-art Cu/low-k CMOS technologies, the integration and introduction of new low-k materials are one of the major bottlenecks due to the bad thermal and mechanical integrity of these materials and the inherited weak interfacial adhesion. Especially the forces resulting from packaging related processes such as dicing, wire bonding, bumping and molding are critical and can easily result in cracking, delamination and chipping of the IC back-end structure if no appropriate measures are taken. This paper presents a methodology for optimizing the thermo-mechanical reliability of bond pads by using a 3D multi-level Finite Element approach. An important characteristic of this methodology is the use of a novel energy-based damage model, which allows a fast qualitative comparison of different back-end structures. The usability of the methodology will be illustrated by the comparison of three different bond pad structures.

Original languageEnglish
Title of host publicationProceedings Electronic Components and Technology, 2005. ECTC '05
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages988-994
Number of pages7
ISBN (Print)0-7803-8907-7
DOIs
Publication statusPublished - 19 Sep 2005
Event55th Electronic Components and Technology Conference, ECTC - Lake Buena Vista, FL, United States
Duration: 31 May 20054 Jun 2005

Conference

Conference55th Electronic Components and Technology Conference, ECTC
Country/TerritoryUnited States
CityLake Buena Vista, FL
Period31/05/054/06/05

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