Novel approach to thin film polycrystalline silicon on glass

A. Illiberi, K. Sharma, M. Creatore, M.C.M. Sanden, van de

Research output: Contribution to journalArticleAcademicpeer-review

25 Citations (Scopus)

Abstract

Thin (1 µm) a-Si:H films have been deposited on glass at high-deposition rate (8 nm/s) and high substrate temperature (400 °C) by the expanding thermal plasma technique (ETP). After a Solid Phase Crystallization treatment at 650 °C for 10 h, many crystal grains are found to extend over the entire thickness (1 µm) of the polycrystalline silicon (poly-Si) films. This result indicates that the scalable, high-deposition rate ETP method can contribute to increase the potential for a widespread diffusion of poly-Si based thin film solar cells on glass.
Original languageEnglish
Pages (from-to)1817-1819
JournalMaterials Letters
Volume63
Issue number21
DOIs
Publication statusPublished - 2009

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