Normalised 1/f noise: a more sensitive diagnostic tool for hot-carrier degradation in submicron MOSFET's

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)
Original languageEnglish
Title of host publicationProc. 5th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Pages131-134
Publication statusPublished - 1994
Eventconference; Proc. 5th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Glasgow, UK, October 1994 -
Duration: 1 Jan 1994 → …

Conference

Conferenceconference; Proc. 5th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Glasgow, UK, October 1994
Period1/01/94 → …
OtherProc. 5th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Glasgow, UK, October 1994

Cite this

Li, X., & Vandamme, L. K. J. (1994). Normalised 1/f noise: a more sensitive diagnostic tool for hot-carrier degradation in submicron MOSFET's. In Proc. 5th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (pp. 131-134)