Nonlinear semiconductor materials for A fully passive low-loss optical combiner

G. Zhao; J.J.G.M. Tol, van der

Nonlinear semiconductor materials for A fully passive low-loss optical combiner

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

A fully passive low-loss nonlinear optical combiner on semiconductor materials is shown based on an integrated Mach-Zehnder interferometer. For this device the nonlinear optical properties of the materials need to be optimized. Intensity dependent absorption and nonlinear refractive index change are calculated.

Original language	English
Title of host publication	Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors; Lausanne; Switzerland; 7 October 2002 through 10 October 2002
Place of Publication	Lausanne, Switzerland
Publisher	Institute of Physics
Pages	423-426
Number of pages	4
Volume	174
Publication status	Published - 1 Dec 2003
Event	Compound Semiconductors 2002, Twenty-Ninth International Symposium - Lausanne, Switzerland Duration: 7 Oct 2002 → 10 Oct 2002

Publication series

Name	Institute of Physics Conference Series
Publisher	Institute of Physics
ISSN (Print)	0951-3248

Conference

Conference	Compound Semiconductors 2002, Twenty-Ninth International Symposium
Country/Territory	Switzerland
City	Lausanne
Period	7/10/02 → 10/10/02

Cite this

Zhao, G., & Tol, van der, J. J. G. M. (2003). Nonlinear semiconductor materials for A fully passive low-loss optical combiner. In Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors; Lausanne; Switzerland; 7 October 2002 through 10 October 2002 (Vol. 174, pp. 423-426). (Institute of Physics Conference Series). Institute of Physics.

Zhao, G. ; Tol, van der, J.J.G.M. / Nonlinear semiconductor materials for A fully passive low-loss optical combiner. Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors; Lausanne; Switzerland; 7 October 2002 through 10 October 2002. Vol. 174 Lausanne, Switzerland : Institute of Physics, 2003. pp. 423-426 (Institute of Physics Conference Series).

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abstract = "A fully passive low-loss nonlinear optical combiner on semiconductor materials is shown based on an integrated Mach-Zehnder interferometer. For this device the nonlinear optical properties of the materials need to be optimized. Intensity dependent absorption and nonlinear refractive index change are calculated.",

author = "G. Zhao and {Tol, van der}, J.J.G.M.",

year = "2003",

month = dec,

day = "1",

language = "English",

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series = "Institute of Physics Conference Series",

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note = "Compound Semiconductors 2002, Twenty-Ninth International Symposium ; Conference date: 07-10-2002 Through 10-10-2002",

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Zhao, G & Tol, van der, JJGM 2003, Nonlinear semiconductor materials for A fully passive low-loss optical combiner. in Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors; Lausanne; Switzerland; 7 October 2002 through 10 October 2002. vol. 174, Institute of Physics Conference Series, Institute of Physics, Lausanne, Switzerland, pp. 423-426, Compound Semiconductors 2002, Twenty-Ninth International Symposium, Lausanne, Switzerland, 7/10/02.

Nonlinear semiconductor materials for A fully passive low-loss optical combiner. / Zhao, G.; Tol, van der, J.J.G.M.
Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors; Lausanne; Switzerland; 7 October 2002 through 10 October 2002. Vol. 174 Lausanne, Switzerland: Institute of Physics, 2003. p. 423-426 (Institute of Physics Conference Series).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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N2 - A fully passive low-loss nonlinear optical combiner on semiconductor materials is shown based on an integrated Mach-Zehnder interferometer. For this device the nonlinear optical properties of the materials need to be optimized. Intensity dependent absorption and nonlinear refractive index change are calculated.

AB - A fully passive low-loss nonlinear optical combiner on semiconductor materials is shown based on an integrated Mach-Zehnder interferometer. For this device the nonlinear optical properties of the materials need to be optimized. Intensity dependent absorption and nonlinear refractive index change are calculated.

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M3 - Conference contribution

VL - 174

T3 - Institute of Physics Conference Series

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BT - Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors; Lausanne; Switzerland; 7 October 2002 through 10 October 2002

PB - Institute of Physics

CY - Lausanne, Switzerland

T2 - Compound Semiconductors 2002, Twenty-Ninth International Symposium

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Zhao G, Tol, van der JJGM. Nonlinear semiconductor materials for A fully passive low-loss optical combiner. In Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors; Lausanne; Switzerland; 7 October 2002 through 10 October 2002. Vol. 174. Lausanne, Switzerland: Institute of Physics. 2003. p. 423-426. (Institute of Physics Conference Series).

Nonlinear semiconductor materials for A fully passive low-loss optical combiner

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