Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime

R.W. van der Heijden; G. Chen; A.T. de Waele; H.M. Gijsman; F.P.B. Tielen

doi:10.1080/13642819208204925

Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime

R.W. van der Heijden
, G. Chen
, A.T. de Waele
, H.M. Gijsman
, F.P.B. Tielen

Research output: Contribution to journal › Article › Academic › peer-review

6 Citations (Scopus)

Abstract

Current-voltage characteristics are reported for ion-implanted Si:As, with As concentrations about 10% below the concentration of the metal-insulator transition, in the temperature range 0-07-1K. The data are analysed with both an electric-field-assisted hopping model and a heating model. It follows that, at least at the lowest temperatures (non-equilibrium), heating is the dominant effect.

Original language	English
Pages (from-to)	849-853
Number of pages	5
Journal	Philosophical Magazine B : physics of condensed matter, statistical mechanics, electronic, optical and magnetic properties
Volume	65
Issue number	4
DOIs	https://doi.org/10.1080/13642819208204925
Publication status	Published - Apr 1992

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van der Heijden, R. W., Chen, G., de Waele, A. T., Gijsman, H. M., & Tielen, F. P. B. (1992). Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime. Philosophical Magazine B : physics of condensed matter, statistical mechanics, electronic, optical and magnetic properties, 65(4), 849-853. https://doi.org/10.1080/13642819208204925

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abstract = "Current-voltage characteristics are reported for ion-implanted Si:As, with As concentrations about 10\% below the concentration of the metal-insulator transition, in the temperature range 0-07-1K. The data are analysed with both an electric-field-assisted hopping model and a heating model. It follows that, at least at the lowest temperatures (non-equilibrium), heating is the dominant effect.",

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van der Heijden, RW, Chen, G, de Waele, AT, Gijsman, HM & Tielen, FPB 1992, 'Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime', Philosophical Magazine B : physics of condensed matter, statistical mechanics, electronic, optical and magnetic properties, vol. 65, no. 4, pp. 849-853. https://doi.org/10.1080/13642819208204925

Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime. / van der Heijden, R.W.; Chen, G.; de Waele, A.T. et al.
In: Philosophical Magazine B : physics of condensed matter, statistical mechanics, electronic, optical and magnetic properties, Vol. 65, No. 4, 04.1992, p. 849-853.

Research output: Contribution to journal › Article › Academic › peer-review

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AU - Gijsman, H.M.

AU - Tielen, F.P.B.

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AB - Current-voltage characteristics are reported for ion-implanted Si:As, with As concentrations about 10% below the concentration of the metal-insulator transition, in the temperature range 0-07-1K. The data are analysed with both an electric-field-assisted hopping model and a heating model. It follows that, at least at the lowest temperatures (non-equilibrium), heating is the dominant effect.

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JF - Philosophical Magazine B : physics of condensed matter, statistical mechanics, electronic, optical and magnetic properties

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ER -

Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime

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