Non-volatile memory device using a polymer modified nanocrystal

A. Kiazadeh; H.L. Gomes; A.M. Rosa da Costa; R.A. Moreira; D.M. Leeuw, de; S.C.J. Meskers

doi:10.1016/j.mseb.2011.01.021

Non-volatile memory device using a polymer modified nanocrystal

A. Kiazadeh, H.L. Gomes, A.M. Rosa da Costa, R.A. Moreira, D.M. Leeuw, de, S.C.J. Meskers

Research output: Contribution to journal › Article › Academic › peer-review

4 Citations (Scopus)

Abstract

Thin-film planar structures using AgCl nanocrystals embedded in a polymer blend; exhibit reliable and reproducible switching between different non-volatile conductance states. It is shown that resistive switching in these systems cannot be related with migration diffusion or aggregation of metals to form metallic filaments. This is supported by temperature-dependent measurement showing that the current in the high conductance state is thermal activated (0.6 eV).

Original language	English
Pages (from-to)	1552-1555
Number of pages	4
Journal	Materials Science and Engineering B
Volume	176
Issue number	19
DOIs	https://doi.org/10.1016/j.mseb.2011.01.021
Publication status	Published - 2011

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10.1016/j.mseb.2011.01.021

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title = "Non-volatile memory device using a polymer modified nanocrystal",

abstract = "Thin-film planar structures using AgCl nanocrystals embedded in a polymer blend; exhibit reliable and reproducible switching between different non-volatile conductance states. It is shown that resistive switching in these systems cannot be related with migration diffusion or aggregation of metals to form metallic filaments. This is supported by temperature-dependent measurement showing that the current in the high conductance state is thermal activated (0.6 eV).",

author = "A. Kiazadeh and H.L. Gomes and {Rosa da Costa}, A.M. and R.A. Moreira and {Leeuw, de}, D.M. and S.C.J. Meskers",

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T1 - Non-volatile memory device using a polymer modified nanocrystal

AU - Kiazadeh, A.

AU - Gomes, H.L.

AU - Rosa da Costa, A.M.

AU - Moreira, R.A.

AU - Leeuw, de, D.M.

AU - Meskers, S.C.J.

PY - 2011

Y1 - 2011

N2 - Thin-film planar structures using AgCl nanocrystals embedded in a polymer blend; exhibit reliable and reproducible switching between different non-volatile conductance states. It is shown that resistive switching in these systems cannot be related with migration diffusion or aggregation of metals to form metallic filaments. This is supported by temperature-dependent measurement showing that the current in the high conductance state is thermal activated (0.6 eV).

AB - Thin-film planar structures using AgCl nanocrystals embedded in a polymer blend; exhibit reliable and reproducible switching between different non-volatile conductance states. It is shown that resistive switching in these systems cannot be related with migration diffusion or aggregation of metals to form metallic filaments. This is supported by temperature-dependent measurement showing that the current in the high conductance state is thermal activated (0.6 eV).

U2 - 10.1016/j.mseb.2011.01.021

DO - 10.1016/j.mseb.2011.01.021

M3 - Article

SN - 0921-5107

VL - 176

SP - 1552

EP - 1555

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 19

ER -

Non-volatile memory device using a polymer modified nanocrystal

Abstract

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