Non-volatile memory device using a polymer modified nanocrystal

A. Kiazadeh, H.L. Gomes, A.M. Rosa da Costa, R.A. Moreira, D.M. Leeuw, de, S.C.J. Meskers

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)

Abstract

Thin-film planar structures using AgCl nanocrystals embedded in a polymer blend; exhibit reliable and reproducible switching between different non-volatile conductance states. It is shown that resistive switching in these systems cannot be related with migration diffusion or aggregation of metals to form metallic filaments. This is supported by temperature-dependent measurement showing that the current in the high conductance state is thermal activated (0.6 eV).
Original languageEnglish
Pages (from-to)1552-1555
Number of pages4
JournalMaterials Science and Engineering B
Volume176
Issue number19
DOIs
Publication statusPublished - 2011

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