Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs

Mohsen Akbari, Amir Sajjad Bahman, Paula Diaz Reigosa, Lorenzo Ceccarelli, Francesco Iannuzzo, Mohammad Tavakoli Bina

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

Being the power loss and temperature distribution in power-electronics semiconductor dies influenced by one another, this paper demonstrates that neglecting such an effect can result in significant errors in electro-thermal simulations and mistaken calculation of junction temperatures. Two case studies on different semiconductor technologies, namely Silicon Insulated-Gate Bipolar Transistors (IGBTs) and Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are presented to corroborate the paper findings. Resultant temperature distributions are obtained by a proposed flowchart, which accepts the corresponding power dissipation input from MATLAB environment and employs a finite element based analysis implemented in COMSOL Multiphysics environment.

Original languageEnglish
Title of host publication2018 24th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)
PublisherInstitute of Electrical and Electronics Engineers
Number of pages6
ISBN (Electronic)978-1-5386-6759-0
ISBN (Print)978-1-5386-6760-6
DOIs
Publication statusPublished - 27 Dec 2018
Externally publishedYes
Event24th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2018 - Stockholm, Sweden
Duration: 26 Sep 201828 Sep 2018
https://therminic2018.eu/

Conference

Conference24th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2018
Abbreviated titleTherminic2018
Country/TerritorySweden
CityStockholm
Period26/09/1828/09/18
Internet address

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