Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs

Mohsen Akbari; Amir Sajjad Bahman; Paula Diaz Reigosa; Lorenzo Ceccarelli; Francesco Iannuzzo; Mohammad Tavakoli Bina

doi:10.1109/THERMINIC.2018.8593307

Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs

Mohsen Akbari, Amir Sajjad Bahman, Paula Diaz Reigosa, Lorenzo Ceccarelli, Francesco Iannuzzo, Mohammad Tavakoli Bina

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

8 Citations (Scopus)

Abstract

Being the power loss and temperature distribution in power-electronics semiconductor dies influenced by one another, this paper demonstrates that neglecting such an effect can result in significant errors in electro-thermal simulations and mistaken calculation of junction temperatures. Two case studies on different semiconductor technologies, namely Silicon Insulated-Gate Bipolar Transistors (IGBTs) and Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are presented to corroborate the paper findings. Resultant temperature distributions are obtained by a proposed flowchart, which accepts the corresponding power dissipation input from MATLAB environment and employs a finite element based analysis implemented in COMSOL Multiphysics environment.

Original language	English
Title of host publication	2018 24th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	6
ISBN (Electronic)	978-1-5386-6759-0
ISBN (Print)	978-1-5386-6760-6
DOIs	https://doi.org/10.1109/THERMINIC.2018.8593307
Publication status	Published - 27 Dec 2018
Externally published	Yes
Event	24th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2018 - Stockholm, Sweden Duration: 26 Sept 2018 → 28 Sept 2018 https://therminic2018.eu/

Conference

Conference	24th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2018
Abbreviated title	Therminic2018
Country/Territory	Sweden
City	Stockholm
Period	26/09/18 → 28/09/18
Internet address	https://therminic2018.eu/

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10.1109/THERMINIC.2018.8593307

Cite this

Akbari, M., Bahman, A. S., Reigosa, P. D., Ceccarelli, L., Iannuzzo, F., & Tavakoli Bina, M. (2018). Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs. In 2018 24th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Article 8593307 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/THERMINIC.2018.8593307

@inproceedings{9cc7ef6eb3be4bbb8a24e4e768d9d5b6,

title = "Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs",

abstract = "Being the power loss and temperature distribution in power-electronics semiconductor dies influenced by one another, this paper demonstrates that neglecting such an effect can result in significant errors in electro-thermal simulations and mistaken calculation of junction temperatures. Two case studies on different semiconductor technologies, namely Silicon Insulated-Gate Bipolar Transistors (IGBTs) and Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are presented to corroborate the paper findings. Resultant temperature distributions are obtained by a proposed flowchart, which accepts the corresponding power dissipation input from MATLAB environment and employs a finite element based analysis implemented in COMSOL Multiphysics environment.",

author = "Mohsen Akbari and Bahman, {Amir Sajjad} and Reigosa, {Paula Diaz} and Lorenzo Ceccarelli and Francesco Iannuzzo and {Tavakoli Bina}, Mohammad",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 24th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2018, Therminic2018 ; Conference date: 26-09-2018 Through 28-09-2018",

year = "2018",

month = dec,

day = "27",

doi = "10.1109/THERMINIC.2018.8593307",

language = "English",

isbn = "978-1-5386-6760-6",

booktitle = "2018 24th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

url = "https://therminic2018.eu/",

}

Akbari, M, Bahman, AS, Reigosa, PD, Ceccarelli, L, Iannuzzo, F & Tavakoli Bina, M 2018, Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs. in 2018 24th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)., 8593307, Institute of Electrical and Electronics Engineers, 24th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2018, Stockholm, Sweden, 26/09/18. https://doi.org/10.1109/THERMINIC.2018.8593307

Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs. / Akbari, Mohsen; Bahman, Amir Sajjad; Reigosa, Paula Diaz et al.
2018 24th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). Institute of Electrical and Electronics Engineers, 2018. 8593307.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs

AU - Akbari, Mohsen

AU - Bahman, Amir Sajjad

AU - Reigosa, Paula Diaz

AU - Ceccarelli, Lorenzo

AU - Iannuzzo, Francesco

AU - Tavakoli Bina, Mohammad

PY - 2018/12/27

Y1 - 2018/12/27

N2 - Being the power loss and temperature distribution in power-electronics semiconductor dies influenced by one another, this paper demonstrates that neglecting such an effect can result in significant errors in electro-thermal simulations and mistaken calculation of junction temperatures. Two case studies on different semiconductor technologies, namely Silicon Insulated-Gate Bipolar Transistors (IGBTs) and Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are presented to corroborate the paper findings. Resultant temperature distributions are obtained by a proposed flowchart, which accepts the corresponding power dissipation input from MATLAB environment and employs a finite element based analysis implemented in COMSOL Multiphysics environment.

AB - Being the power loss and temperature distribution in power-electronics semiconductor dies influenced by one another, this paper demonstrates that neglecting such an effect can result in significant errors in electro-thermal simulations and mistaken calculation of junction temperatures. Two case studies on different semiconductor technologies, namely Silicon Insulated-Gate Bipolar Transistors (IGBTs) and Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are presented to corroborate the paper findings. Resultant temperature distributions are obtained by a proposed flowchart, which accepts the corresponding power dissipation input from MATLAB environment and employs a finite element based analysis implemented in COMSOL Multiphysics environment.

UR - http://www.scopus.com/inward/record.url?scp=85061511900&partnerID=8YFLogxK

U2 - 10.1109/THERMINIC.2018.8593307

DO - 10.1109/THERMINIC.2018.8593307

M3 - Conference contribution

AN - SCOPUS:85061511900

SN - 978-1-5386-6760-6

BT - 2018 24th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)

PB - Institute of Electrical and Electronics Engineers

T2 - 24th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2018

Y2 - 26 September 2018 through 28 September 2018

ER -

Akbari M, Bahman AS, Reigosa PD, Ceccarelli L, Iannuzzo F, Tavakoli Bina M. Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs. In 2018 24th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). Institute of Electrical and Electronics Engineers. 2018. 8593307 doi: 10.1109/THERMINIC.2018.8593307

Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs

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