Non-invasive local (photo)conductivity measurements of metallic and semiconductor nanowires in the near-field

Niels van Hoof, Stan ter Huurne, Matteo Parente, Andrea Baldi, Jaime Gomez-Rivas

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Abstract

The capability of THz-time domain spectroscopy (TDS) for the non-invasive extraction of the conductive properties of metal and semiconductor surfaces is essential for advancements in material science and device analysis. Here, we demonstrate that this technique can be successfully applied to image and analyze sub-diffraction inhomogeneities using THz near-field microscopy. Additionally, a novel total internal reflection geometry enables time-resolved THz time-domain near-field microscopy using ultrashort optical pulses on photoexcited semiconducting materials with a resolution of < 50~ mu { mathrm{ m}}.

Original languageEnglish
Title of host publication2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves
Place of PublicationPiscataway
PublisherIEEE Computer Society
Number of pages2
ISBN (Electronic)978-1-5386-8285-2
DOIs
Publication statusPublished - Sep 2019
Event44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019 - Paris, France
Duration: 1 Sep 20196 Sep 2019

Conference

Conference44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019
CountryFrance
CityParis
Period1/09/196/09/19

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    van Hoof, N., ter Huurne, S., Parente, M., Baldi, A., & Gomez-Rivas, J. (2019). Non-invasive local (photo)conductivity measurements of metallic and semiconductor nanowires in the near-field. In 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves [8874434] IEEE Computer Society. https://doi.org/10.1109/IRMMW-THz.2019.8874434