Non-invasive local (photo)conductivity measurements of metallic and semiconductor nanowires in the near-field

Niels  van Hoof; Stan ter Huurne; Matteo Parente; Andrea Baldi; Jaime Gomez-Rivas

doi:10.1109/IRMMW-THz.2019.8874434

Non-invasive local (photo)conductivity measurements of metallic and semiconductor nanowires in the near-field

Niels van Hoof, Stan ter Huurne, Matteo Parente, Andrea Baldi, Jaime Gomez-Rivas

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

The capability of THz-time domain spectroscopy (TDS) for the non-invasive extraction of the conductive properties of metal and semiconductor surfaces is essential for advancements in material science and device analysis. Here, we demonstrate that this technique can be successfully applied to image and analyze sub-diffraction inhomogeneities using THz near-field microscopy. Additionally, a novel total internal reflection geometry enables time-resolved THz time-domain near-field microscopy using ultrashort optical pulses on photoexcited semiconducting materials with a resolution of < 50~ mu { mathrm{ m}}.

Original language	English
Title of host publication	2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves
Place of Publication	Piscataway
Publisher	IEEE Computer Society
Number of pages	2
ISBN (Electronic)	978-1-5386-8285-2
DOIs	https://doi.org/10.1109/IRMMW-THz.2019.8874434
Publication status	Published - Sep 2019
Event	44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019 - Paris, France Duration: 1 Sep 2019 → 6 Sep 2019

Conference

Conference	44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019
Country	France
City	Paris
Period	1/09/19 → 6/09/19

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10.1109/IRMMW-THz.2019.8874434

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title = "Non-invasive local (photo)conductivity measurements of metallic and semiconductor nanowires in the near-field",

abstract = "The capability of THz-time domain spectroscopy (TDS) for the non-invasive extraction of the conductive properties of metal and semiconductor surfaces is essential for advancements in material science and device analysis. Here, we demonstrate that this technique can be successfully applied to image and analyze sub-diffraction inhomogeneities using THz near-field microscopy. Additionally, a novel total internal reflection geometry enables time-resolved THz time-domain near-field microscopy using ultrashort optical pulses on photoexcited semiconducting materials with a resolution of < 50~ mu { mathrm{ m}}.",

author = "{van Hoof}, Niels and {ter Huurne}, Stan and Matteo Parente and Andrea Baldi and Jaime Gomez-Rivas",

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booktitle = "2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves",

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van Hoof, N , ter Huurne, S, Parente, M, Baldi, A & Gomez-Rivas, J 2019, Non-invasive local (photo)conductivity measurements of metallic and semiconductor nanowires in the near-field. in 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves., 8874434, IEEE Computer Society, Piscataway, 44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019, Paris, France, 1/09/19. https://doi.org/10.1109/IRMMW-THz.2019.8874434

Non-invasive local (photo)conductivity measurements of metallic and semiconductor nanowires in the near-field. / van Hoof, Niels ; ter Huurne, Stan; Parente, Matteo; Baldi, Andrea; Gomez-Rivas, Jaime.

2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves. Piscataway : IEEE Computer Society, 2019. 8874434.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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