Abstract
The capability of THz-time domain spectroscopy (TDS) for the non-invasive extraction of the conductive properties of metal and semiconductor surfaces is essential for advancements in material science and device analysis. Here, we demonstrate that this technique can be successfully applied to image and analyze sub-diffraction inhomogeneities using THz near-field microscopy. Additionally, a novel total internal reflection geometry enables time-resolved THz time-domain near-field microscopy using ultrashort optical pulses on photoexcited semiconducting materials with a resolution of < 50~ mu { mathrm{ m}}.
Original language | English |
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Title of host publication | 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves |
Place of Publication | Piscataway |
Publisher | IEEE Computer Society |
Number of pages | 2 |
ISBN (Electronic) | 978-1-5386-8285-2 |
DOIs | |
Publication status | Published - Sep 2019 |
Event | 44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019 - Paris, France Duration: 1 Sep 2019 → 6 Sep 2019 |
Conference
Conference | 44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019 |
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Country | France |
City | Paris |
Period | 1/09/19 → 6/09/19 |